[1] |
Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
[2] |
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星). A field-effect WSe2/Si heterojunction diode[J]. 中国物理B, 2023, 32(1): 18505-018505. |
[3] |
Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔). High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response[J]. 中国物理B, 2022, 31(12): 128502-128502. |
[4] |
Ming-Ming Fan(范明明), Kang-Li Xu(许康丽), Ling Cao(曹铃), and Xiu-Yan Li(李秀燕). Fast-speed self-powered PEDOT: PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection[J]. 中国物理B, 2022, 31(4): 48501-048501. |
[5] |
Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春). Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors[J]. 中国物理B, 2021, 30(12): 126104-126104. |
[6] |
Chunhua An(安春华), Zhihao Xu(徐志昊), Jing Zhang(张璟), Enxiu Wu(武恩秀), Xinli Ma(马新莉), Yidi Pang(庞奕荻), Xiao Fu(付晓), Xiaodong Hu(胡晓东), Dong Sun(孙栋), Jinshui Miao(苗金水), and Jing Liu(刘晶). Anisotropic photoresponse of layered rhenium disulfide synaptic transistors[J]. 中国物理B, 2021, 30(8): 88503-088503. |
[7] |
Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳). Achieving high-performance multilayer MoSe2 photodetectors by defect engineering[J]. 中国物理B, 2021, 30(8): 87801-087801. |
[8] |
Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
[9] |
. [J]. 中国物理B, 2021, 30(1): 17302-. |
[10] |
郭德双, 李微, 王登魁, 孟兵恒, 房丹, 魏志鹏. High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition[J]. 中国物理B, 2020, 29(9): 98504-098504. |
[11] |
刘巧莉, 张海燕, 郝凌翔, 胡安琪, 吴光, 郭霞. Total dose test with γ-ray for silicon single photon avalanche diodes[J]. 中国物理B, 2020, 29(8): 88501-088501. |
[12] |
董可秀, 陈敦军, 蔡青, 刘燕丽, 王玉杰. Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. 中国物理B, 2020, 29(8): 88502-088502. |
[13] |
郭延博, 竺立强. Recent progress in optoelectronic neuromorphic devices[J]. 中国物理B, 2020, 29(7): 78502-078502. |
[14] |
喻文娟, 张钰, 许明珠, 逯鑫淼. Dark count in single-photon avalanche diodes: A novel statistical behavioral model[J]. 中国物理B, 2020, 29(4): 48503-048503. |
[15] |
洪成允, 黄刚锋, 要文文, 邓加军, 刘小龙. Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors[J]. 中国物理B, 2019, 28(12): 128502-128502. |