中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118505-118505.doi: 10.1088/1674-1056/25/11/118505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Ge Zhu(朱阁), Fu Zheng(郑福), Chao Wang(王超), Zhibin Sun(孙志斌), Guangjie Zhai(翟光杰), Qing Zhao(赵清)   

  1. 1 School of Physics, Beijing Institute of Technology, Beijing 100081, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2016-05-26 修回日期:2016-07-07 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Qing Zhao E-mail:qzhaoyuping@bit.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11275024, 61274024, and 61474123), the Youth Innovation Promotion Association, China (Grant No. 2013105), and the Ministry of Science and Technology of China (Grant Nos. 2013YQ030595-3 and 2011AA120101).

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Ge Zhu(朱阁)1, Fu Zheng(郑福)2,3, Chao Wang(王超)1,3, Zhibin Sun(孙志斌)3, Guangjie Zhai(翟光杰)3, Qing Zhao(赵清)1   

  1. 1 School of Physics, Beijing Institute of Technology, Beijing 100081, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2016-05-26 Revised:2016-07-07 Online:2016-11-05 Published:2016-11-05
  • Contact: Qing Zhao E-mail:qzhaoyuping@bit.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11275024, 61274024, and 61474123), the Youth Innovation Promotion Association, China (Grant No. 2013105), and the Ministry of Science and Technology of China (Grant Nos. 2013YQ030595-3 and 2011AA120101).

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摘要： We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage (Vex) when operated in 1-GHz sinusoidally gated mode. The single-photon avalanche diode was cooled to -30 degrees Celsius. When the Vex is too low (0.2 V-0.8 V) or too high (3 V-4.2 V), the timing jitter is increased with the Vex, particularly at high Vex. While at middle Vex (1 V-2.8 V), the timing jitter is reduced. Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the Vex and the width of the gate-on time. For the 1-GHz sinusoidally gated detector, the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4% and a dark count rate of ~2.08×10-5 per gate at the Vex of 2.8 V. To evaluate the whole performance of the detector, we calculated the noise equivalent power (NEP) and the afterpulse probability (Pap). It is found that both NEP and Pap increase quickly when the Vex is above 2.8 V. At 2.8-V Vex, the NEP and Pap are ~2.06×10-16 W/Hz1/2 and 7.11%, respectively. Therefore, the detector should be operated with Vex of 2.8 V to exploit the fast time response, low NEP and low Pap.

关键词: timing jitter, avalanche photodiode, excess bias voltage, single-photon detector

Abstract: We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage (Vex) when operated in 1-GHz sinusoidally gated mode. The single-photon avalanche diode was cooled to -30 degrees Celsius. When the Vex is too low (0.2 V-0.8 V) or too high (3 V-4.2 V), the timing jitter is increased with the Vex, particularly at high Vex. While at middle Vex (1 V-2.8 V), the timing jitter is reduced. Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the Vex and the width of the gate-on time. For the 1-GHz sinusoidally gated detector, the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4% and a dark count rate of ~2.08×10-5 per gate at the Vex of 2.8 V. To evaluate the whole performance of the detector, we calculated the noise equivalent power (NEP) and the afterpulse probability (Pap). It is found that both NEP and Pap increase quickly when the Vex is above 2.8 V. At 2.8-V Vex, the NEP and Pap are ~2.06×10-16 W/Hz1/2 and 7.11%, respectively. Therefore, the detector should be operated with Vex of 2.8 V to exploit the fast time response, low NEP and low Pap.

Key words: timing jitter, avalanche photodiode, excess bias voltage, single-photon detector

中图分类号:  (Optoelectronic device characterization, design, and modeling)

  • 85.60.Bt
85.60.Gz (Photodetectors (including infrared and CCD detectors))