InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

doi:10.1088/1674-1056/20/1/018504

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/20/1/018504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

左玉华, 曹权, 张云, 张岭梓, 郭剑川, 薛春来, 成步文, 王启明

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-01-20 修回日期:2010-03-08 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006CB302802).

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

Zuo Yu-Hua(左玉华)^†,Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-01-20 Revised:2010-03-08 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006CB302802).

摘要/Abstract

摘要： In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm²) with 3 dB bandwidth at 13.4 GHz have been achieved.

Abstract: In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm²) with 3 dB bandwidth at 13.4 GHz have been achieved.

Key words: high responsivity, diluted waveguide, evanescent coupling, waveguide photodiode

中图分类号: (Photodiodes; phototransistors; photoresistors)

85.60.Dw

42.81.Qb (Fiber waveguides, couplers, and arrays) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

左玉华, 曹权, 张云, 张岭梓, 郭剑川, 薛春来, 成步文, 王启明. InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm[J]. 中国物理B, 2011, 20(1): 18504-018504.

Zuo Yu-Hua(左玉华),Cao Quan(曹权),Zhang Yun(张云), Zhang Ling-Zi(张岭梓), Guo Jian-Chuan(郭剑川),Xue Chun-Lai(薛春来),Cheng Bu-Wen(成步文),and Wang Qi-Ming(王启明). InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm[J]. Chin. Phys. B, 2011, 20(1): 18504-018504.

参考文献 20

[1]	Williams K J, Tulchinsky D A and Campbell J C 2007 2007 International Topical Meeting on Microwave Photonics The Fairmont Empress Victoria, BC, Canada, Oct. 2--5 2007 p9
[2]	Chtioui M, Enard A, Carpentier D, Bernard S, Rousseau B, Lelarge F, Porrimereau F and Achouche M 2008 IEEE Photonic Tech. Lett. 20 202
[3]	Seeds A J and Williams K J 2006 J. Lightwave Technol. 24 4628
[4]	Nagatsuma T, Ito H and Ishibashi T 2009 Laser Photonics Rev. 3 123
[5]	Nagatsuka T, Itakura S, Sakai K and Hirano Y 2008 2008 Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology Sydney 7--10 July 2008 1,2 p277
[6]	Wu Y S, Shi J W, Wu J Y, Huang F H, Chan Y J, Huang Y L and Xuan R 2005 IEEE Photonic Tech. Lett. 17 878
[7]	Wu Y S, Shi J W, Chiu P H and Lin W 2007 IEEE Photonic Tech. Lett. 19 1682
[8]	Jasmin S, Vodjdani N, Renaud J C and Enard A 1997 IEEE T. Microw. Theory 45 1337
[9]	Shi J W, Wu Y S, Wu C Y, Chiu P H and Hong C C 2005 IEEE Photonic Tech. Lett. 17 1929
[10]	Ito H, Nagatsuma T, Hirata A, Minotani T, Sasaki A, Hirota Y and Ishibashi T 2003 IEEE P-Optoelectron. 150 138
[11]	Chtioui M, Enard A, Carpentier D, Bernard S, Rousseau B, Lelarge F, Pommereau F and Achouche M 2008 IEEE Photonic Tech. Lett. 20 1163
[12]	Williams K J, Tulchinsky D A, Boos J B, Park D, Goetz P G and Rabinovich W S 2006 2006 International Topical Meeting on Microwaves Photonics Grenoble, France 3--6 Oct. 2006 p93
[13]	Williams K J, Esman R D and Dagenais M 1994 IEEE Photonic Tech. Lett. 6 639
[14]	Liu P L, Williams K J, Frankel M Y and Esman R D 1999 IEEE T. Microw. Theory 47 1297
[15]	Williams K J and Esman R D 1999 J. Lightwave Technol. 17 1443
[16]	Islam M S, Nespola A, Yeahia M, Wu M C, Sivco D L and Cho A Y 2000 Leos 2000 --- IEEE Annual Meeting Conference Proceedings Rio Grande, Puerto Rico 13--16 Nov. 2000 1,2 p82
[17]	Zhang Y X, Liao Z Y and Wang W 2009 Chin. Phys. B 18 2393
[18]	Zhang Y, Zuo Y H, Guo J C, Ding W C, Cheng B W, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 225
[19]	Zhang Y, Guo J C, Ding W C, Cheng B W, Yu J Z and Wang Q M 2008 J. Semiconductors 29 555
[20]	Hawkins R J, Deri R J and Wada O 1991 Opt. Lett. 16 470

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

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