Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

doi:10.1088/1674-1056/21/10/108504

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/21/10/108504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

孙云飞^{a b c d}, 孙建东^{a c}, 张晓渝^a, 秦华^a, 张宝顺^a, 吴东岷^{a b}

a International Laboratory for Adaptive Bio-Nanotechnology (i-Lab), Suzhou Institute of Nano-Technologyand Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Key Laboratory of Nanodevices, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
c Graduate University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-02-09 修回日期:2012-03-01 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. G2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y0BAQ31001), the National Natural Science Foundation of China (Grant Nos. 60871077 and 61107093), and the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences (Grant No. 2010T2J07).

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

Sun Yun-Fei (孙云飞)^{a b c d}, Sun Jan-Dong (孙建东)^{a c}, Zhang Xiao-Yu (张晓渝)^a, Qin Hua (秦华)^a, Zhang Bao-Shun (张宝顺)^a, Wu Dong-Min (吴东岷)^{a b}

a International Laboratory for Adaptive Bio-Nanotechnology (i-Lab), Suzhou Institute of Nano-Technologyand Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Key Laboratory of Nanodevices, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
c Graduate University of Chinese Academy of Sciences, Beijing 100190, China

Received:2012-02-09 Revised:2012-03-01 Online:2012-09-01 Published:2012-09-01
Contact: Wu Dong-Min E-mail:dmwu2008@sinano.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. G2009CB929303), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y0BAQ31001), the National Natural Science Foundation of China (Grant Nos. 60871077 and 61107093), and the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences (Grant No. 2010T2J07).

摘要/Abstract

摘要： An optimized micro-gated terahertz detector with novel triple resonant antenna is presented. The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna. In finite-difference-time-domain simulations, we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L_gs (the gap between the gate and the source/drain antenna) and L_w (the gap between the source and drain antenna). With the improved triple resonant antenna, an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×10² V/W at a frequency of 903 GHz at room temperature.

关键词: terahertz detector, triple resonant antenna, two-dimensional electron gas, high electron mobility transistor

Abstract: An optimized micro-gated terahertz detector with novel triple resonant antenna is presented. The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna. In finite-difference-time-domain simulations, we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L_gs (the gap between the gate and the source/drain antenna) and L_w (the gap between the source and drain antenna). With the improved triple resonant antenna, an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×10² V/W at a frequency of 903 GHz at room temperature.

Key words: terahertz detector, triple resonant antenna, two-dimensional electron gas, high electron mobility transistor

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

72.80.Ey (III-V and II-VI semiconductors) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 84.40.Fe (Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.))

孙云飞, 孙建东, 张晓渝, 秦华, 张宝顺, 吴东岷. Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors[J]. 中国物理B, 2012, 21(10): 108504-108504.

Sun Yun-Fei (孙云飞), Sun Jan-Dong (孙建东), Zhang Xiao-Yu (张晓渝), Qin Hua (秦华), Zhang Bao-Shun (张宝顺), Wu Dong-Min (吴东岷). Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors[J]. Chin. Phys. B, 2012, 21(10): 108504-108504.

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Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

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