中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/21/10/108504
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
孙云飞a b c d, 孙建东a c, 张晓渝a, 秦华a, 张宝顺a, 吴东岷a b
Sun Yun-Fei (孙云飞)a b c d, Sun Jan-Dong (孙建东)a c, Zhang Xiao-Yu (张晓渝)a, Qin Hua (秦华)a, Zhang Bao-Shun (张宝顺)a, Wu Dong-Min (吴东岷)a b
摘要: An optimized micro-gated terahertz detector with novel triple resonant antenna is presented. The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna. In finite-difference-time-domain simulations, we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters Lgs (the gap between the gate and the source/drain antenna) and Lw (the gap between the source and drain antenna). With the improved triple resonant antenna, an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.
中图分类号: (Photodetectors (including infrared and CCD detectors))