High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/21/10/108503

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/21/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

付立华, 陆海, 陈敦军, 张荣, 郑有炓, 魏珂, 刘新宇

a Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2012-03-02 修回日期:2012-04-11 出版日期:2012-09-01 发布日期:2012-09-01

High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇)

a Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2012-03-02 Revised:2012-04-11 Online:2012-09-01 Published:2012-09-01
Contact: Lu Hai E-mail:hailu@nju.edu.cn

摘要/Abstract

摘要： A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor (HEMT). An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence, beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress. While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress, the recovery is attributed to high field induced electron detrapping. The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.

关键词: AlGaN/GaN HEMT, step stress test, high electric field, electron detrapping

Abstract: A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor (HEMT). An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence, beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress. While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress, the recovery is attributed to high field induced electron detrapping. The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.

Key words: AlGaN/GaN HEMT, step stress test, high electric field, electron detrapping

中图分类号: (Field effect devices)

85.30.Tv

77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.) 73.61.Ey (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

付立华, 陆海, 陈敦军, 张荣, 郑有炓, 魏珂, 刘新宇. High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor[J]. 中国物理B, 2012, 21(10): 108503-108503.

Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇). High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor[J]. Chin. Phys. B, 2012, 21(10): 108503-108503.

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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

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