The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

doi:10.1088/1674-1056/20/12/129401

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 129401-129401.doi: 10.1088/1674-1056/20/12/129401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

秦军瑞, 陈书明, 刘必慰, 刘征, 梁斌, 杜延康

School of Computer Science, National University of Defense Technology, Changsha 410073, China

收稿日期:2011-05-24 修回日期:2011-07-12 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070).

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Qin Jun-Rui(秦军瑞)^†, Chen Shu-Ming(陈书明), Liu Bi-Wei(刘必慰), Liu Zheng(刘征), Liang Bin(梁斌), and Du Yan-Kang(杜延康)

School of Computer Science, National University of Defense Technology, Changsha 410073, China

Received:2011-05-24 Revised:2011-07-12 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070).

摘要/Abstract

摘要： Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.

Abstract: Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.

Key words: substrate doping, charge collection, single event transient propagation, bipolar amplification

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

秦军瑞, 陈书明, 刘必慰, 刘征, 梁斌, 杜延康. The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology[J]. 中国物理B, 2011, 20(12): 129401-129401.

Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liu Bi-Wei(刘必慰), Liu Zheng(刘征), Liang Bin(梁斌), and Du Yan-Kang(杜延康) . The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology[J]. Chin. Phys. B, 2011, 20(12): 129401-129401.

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

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