中国物理B ›› 2015, Vol. 24 ›› Issue (7): 79401-079401.doi: 10.1088/1674-1056/24/7/079401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇    下一篇

Effect of body biasing on single-event induced charge collection in deep N-well technology

丁一a, 胡建国a, 秦军瑞b, 谭洪舟a   

  1. a School of Information Science and Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    b Chinese Electronic Equipment System Engineering Company, Beijing 100141, China
  • 收稿日期:2014-12-18 修回日期:2015-02-09 出版日期:2015-07-05 发布日期:2015-07-05

Effect of body biasing on single-event induced charge collection in deep N-well technology

Ding Yi (丁一)a, Hu Jian-Guo (胡建国)a, Qin Jun-Rui (秦军瑞)b, Tan Hong-Zhou (谭洪舟)a   

  1. a School of Information Science and Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    b Chinese Electronic Equipment System Engineering Company, Beijing 100141, China
  • Received:2014-12-18 Revised:2015-02-09 Online:2015-07-05 Published:2015-07-05
  • Contact: Hu Jian-Guo E-mail:hujguo@mail.sysu.edu.cn

摘要: As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well.

关键词: body biasing, electron, hole, bipolar amplification

Abstract: As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well.

Key words: body biasing, electron, hole, bipolar amplification

中图分类号:  (Radiation processes)

  • 94.05.Dd
85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)