Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

doi:10.1088/1674-1056/ac21ba

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17701-017701.doi: 10.1088/1674-1056/ac21ba

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Yang-Yan Guo(郭仰岩)^1,2, Wei-Hua Han(韩伟华)^1,2,3,†, Xiao-Di Zhang(张晓迪)^1,2, Jun-Dong Chen(陈俊东)^1,2, and Fu-Hua Yang(杨富华)^1,2,3,4,‡

1 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Beijing Academy of Quantum Information Science, Beijing 100193, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2021-07-07 修回日期:2021-08-09 接受日期:2021-08-27 出版日期:2021-12-03 发布日期:2021-12-30
通讯作者: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503).

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Yang-Yan Guo(郭仰岩)^1,2, Wei-Hua Han(韩伟华)^1,2,3,†, Xiao-Di Zhang(张晓迪)^1,2, Jun-Dong Chen(陈俊东)^1,2, and Fu-Hua Yang(杨富华)^1,2,3,4,‡

1 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Beijing Academy of Quantum Information Science, Beijing 100193, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2021-07-07 Revised:2021-08-09 Accepted:2021-08-27 Online:2021-12-03 Published:2021-12-30
Contact: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503).

摘要/Abstract

摘要： We investigate the influence of source and drain bias voltages (V_DS) on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 K. We demonstrate that the transverse electric field introduced from V_DS has a minor influence on the threshold voltage of the device. The transverse electric field plays the role of amplifying the gate restriction effect of the channel. The one-dimensional (1D)-band dominated transport is demonstrated to be modulated by V_DS in the saturation region and the linear region, with the sub-band energy levels in the channel (E_channel) intersecting with Fermi levels of the source (E_fS) and the drain (E_fD) in turn as V_g increases. The turning points from the linear region to the saturation region shift to higher gate voltages with V_DS increase because the higher Fermi energy levels of the channel required to meet the situation of E_fD =E_channel. We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel, equivalent to the effect of thermal temperature on the increase of electron energy. Our work provides a detailed description of the bias-modulated quantum electronic properties, which will give a more comprehensive understanding of transport behavior in nanoscale devices.

关键词: junctionless nanowire transistors, quantum transport spectrum, source and drain voltage, low-temperature conductance

Abstract: We investigate the influence of source and drain bias voltages (V_DS) on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 K. We demonstrate that the transverse electric field introduced from V_DS has a minor influence on the threshold voltage of the device. The transverse electric field plays the role of amplifying the gate restriction effect of the channel. The one-dimensional (1D)-band dominated transport is demonstrated to be modulated by V_DS in the saturation region and the linear region, with the sub-band energy levels in the channel (E_channel) intersecting with Fermi levels of the source (E_fS) and the drain (E_fD) in turn as V_g increases. The turning points from the linear region to the saturation region shift to higher gate voltages with V_DS increase because the higher Fermi energy levels of the channel required to meet the situation of E_fD =E_channel. We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel, equivalent to the effect of thermal temperature on the increase of electron energy. Our work provides a detailed description of the bias-modulated quantum electronic properties, which will give a more comprehensive understanding of transport behavior in nanoscale devices.

Key words: junctionless nanowire transistors, quantum transport spectrum, source and drain voltage, low-temperature conductance

中图分类号: (For silicon electronics)

77.55.df

85.30.-z (Semiconductor devices) 05.60.Gg (Quantum transport) 61.46.Km (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor[J]. 中国物理B, 2022, 31(1): 17701-017701.

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Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

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