Self-compliance multilevel storage characteristic in HfO2-based device

doi:10.1088/1674-1056/25/10/106102

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 106102-106102.doi: 10.1088/1674-1056/25/10/106102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Self-compliance multilevel storage characteristic in HfO₂-based device

Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢)

1 Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China;
2 Cuiying Honors College, Lanzhou University, Lanzhou 730000, China;
3 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

收稿日期:2016-05-14 修回日期:2016-06-06 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Ying-Tao Li E-mail:li_yt06@lzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61664001, 61574070, and 61306148) and the Application Research and Development Plan of Gansu Academy of Sciences, China (Grant Nos. 2015JK-11 and 2015JK-01).

Self-compliance multilevel storage characteristic in HfO₂-based device

Xiao-Ping Gao(高晓平)¹, Li-Ping Fu(傅丽萍)², Chuan-Bing Chen(陈传兵)³, Peng Yuan(袁鹏)³, Ying-Tao Li(李颖弢)³

1 Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China;
2 Cuiying Honors College, Lanzhou University, Lanzhou 730000, China;
3 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Received:2016-05-14 Revised:2016-06-06 Online:2016-10-05 Published:2016-10-05
Contact: Ying-Tao Li E-mail:li_yt06@lzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61664001, 61574070, and 61306148) and the Application Research and Development Plan of Gansu Academy of Sciences, China (Grant Nos. 2015JK-11 and 2015JK-01).

摘要/Abstract

摘要：

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO₂-based memory device with Ag/HfO₂/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 10⁴ s, which may be useful for the applications in nonvolatile multilevel storage.

关键词: resistive switching, resistive random access memory, multilevel, self-compliance

Abstract:

Key words: resistive switching, resistive random access memory, multilevel, self-compliance

中图分类号: (Vacancies)

61.72.jd

68.60.-p (Physical properties of thin films, nonelectronic) 72.20.-i (Conductivity phenomena in semiconductors and insulators) 73.40.Rw (Metal-insulator-metal structures)

高晓平, 傅丽萍, 陈传兵, 袁鹏, 李颖弢. Self-compliance multilevel storage characteristic in HfO₂-based device[J]. 中国物理B, 2016, 25(10): 106102-106102.

Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢). Self-compliance multilevel storage characteristic in HfO₂-based device[J]. Chin. Phys. B, 2016, 25(10): 106102-106102.

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Self-compliance multilevel storage characteristic in HfO₂-based device

Self-compliance multilevel storage characteristic in HfO₂-based device

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