Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device

doi:10.1088/1674-1056/abf34e

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 118701-118701.doi: 10.1088/1674-1056/abf34e

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device

Jin-Long Jiao(焦金龙)¹, Qiu-Hong Gan(甘秋宏)¹, Shi Cheng(程实)¹, Ye Liao(廖晔)¹, Shao-Ying Ke(柯少颖)², Wei Huang(黄巍)^1,†, Jian-Yuan Wang(汪建元)¹, Cheng Li(李成)¹, and Song-Yan Chen(陈松岩)¹

1 Department of Physics and Jiujiang Research Institute, Xiamen University, Xiamen 361005, China;
2 College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

收稿日期:2021-01-21 修回日期:2021-03-16 接受日期:2021-03-30 出版日期:2021-10-13 发布日期:2021-10-22
通讯作者: Wei Huang E-mail:weihuang@xmu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62004087, 61474081, and 61534005), the Natural Science Foundation of Fujian Province, China (Grant No. 2020J01815), the Natural Science Foundation of Zhangzhou, China (Grant No. ZZ2020J32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192ACBL20048).

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device

1 Department of Physics and Jiujiang Research Institute, Xiamen University, Xiamen 361005, China;
2 College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

Received:2021-01-21 Revised:2021-03-16 Accepted:2021-03-30 Online:2021-10-13 Published:2021-10-22
Contact: Wei Huang E-mail:weihuang@xmu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62004087, 61474081, and 61534005), the Natural Science Foundation of Fujian Province, China (Grant No. 2020J01815), the Natural Science Foundation of Zhangzhou, China (Grant No. ZZ2020J32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192ACBL20048).

摘要/Abstract

摘要： The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO₂/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.

关键词: filament, memory, resistive switching

Abstract: The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO₂/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.

Key words: filament, memory, resistive switching

中图分类号: (Mechanical properties)

87.15.La

79.60.Dp (Adsorbed layers and thin films) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Jin-Long Jiao(焦金龙), Qiu-Hong Gan(甘秋宏), Shi Cheng(程实), Ye Liao(廖晔), Shao-Ying Ke(柯少颖), Wei Huang(黄巍), Jian-Yuan Wang(汪建元), Cheng Li(李成), and Song-Yan Chen(陈松岩). Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device[J]. 中国物理B, 2021, 30(11): 118701-118701.

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Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device

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