Bias polarity-dependent unipolar switching behavior in NiO/SrTiO3 stacked layer

doi:10.1088/1674-1056/27/4/047304

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/27/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer

Xian-Wen Sun(孙献文), Cai-Hong Jia(贾彩虹), Xian-Sheng Liu(刘献省), Guo-Qiang Li(李国强), Wei-Feng Zhang(张伟风)

Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, China

收稿日期:2017-09-18 修回日期:2018-01-22 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Wei-Feng Zhang E-mail:wfzhang@henu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11404093), the Foundation of Henan Provincial Science and Technology Department, China (Grant No. 132102210258), the Research Funding from Henan Province, China (Grant Nos. 15A140001, 2015GGJS-021, and 17HASTIT014), and the Henan University Emerging Cross and Characteristic Discipline Cultivation Program, China (Grant No. xxjc20140016).

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer

Xian-Wen Sun(孙献文), Cai-Hong Jia(贾彩虹), Xian-Sheng Liu(刘献省), Guo-Qiang Li(李国强), Wei-Feng Zhang(张伟风)

Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, China

Received:2017-09-18 Revised:2018-01-22 Online:2018-04-05 Published:2018-04-05
Contact: Wei-Feng Zhang E-mail:wfzhang@henu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11404093), the Foundation of Henan Provincial Science and Technology Department, China (Grant No. 132102210258), the Research Funding from Henan Province, China (Grant Nos. 15A140001, 2015GGJS-021, and 17HASTIT014), and the Henan University Emerging Cross and Characteristic Discipline Cultivation Program, China (Grant No. xxjc20140016).

摘要/Abstract

摘要： The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching (RS) cells. Here we report the RS properties of Au/NiO/SrTiO₃(STO)/Pt memory cells. The switching repeatability is closely related to the applied bias polarity, which is different from the scenario of the Au/STO/Pt cells reported in our previous researches. The high resistance in positive bias is greater than that in negative bias. The R(T)-R₀I²R(T) plot of the on-state I-V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias, respectively. These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode. The spatial RS location is identified with the weaker part along the conductance filament length direction, which should be near the NiO/STO interface and STO/Pt interface under positive and negative bias, respectively.

关键词: SrTiO₃ thin film, unipolar resistive switching, oxygen vacancies

Abstract: The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching (RS) cells. Here we report the RS properties of Au/NiO/SrTiO₃(STO)/Pt memory cells. The switching repeatability is closely related to the applied bias polarity, which is different from the scenario of the Au/STO/Pt cells reported in our previous researches. The high resistance in positive bias is greater than that in negative bias. The R(T)-R₀I²R(T) plot of the on-state I-V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias, respectively. These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode. The spatial RS location is identified with the weaker part along the conductance filament length direction, which should be near the NiO/STO interface and STO/Pt interface under positive and negative bias, respectively.

Key words: SrTiO₃ thin film, unipolar resistive switching, oxygen vacancies

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.50.-h (Electronic transport phenomena in thin films)

孙献文, 贾彩虹, 刘献省, 李国强, 张伟风. Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer[J]. 中国物理B, 2018, 27(4): 47304-047304.

Xian-Wen Sun(孙献文), Cai-Hong Jia(贾彩虹), Xian-Sheng Liu(刘献省), Guo-Qiang Li(李国强), Wei-Feng Zhang(张伟风). Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer[J]. Chin. Phys. B, 2018, 27(4): 47304-047304.

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Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO₃ stacked layer

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