High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer

doi:10.1088/1674-1056/27/8/087701

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87701-087701.doi: 10.1088/1674-1056/27/8/087701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮)

School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic, Communication Devices, Tianjin University of Technology, Tianjin, China

收稿日期:2018-04-24 修回日期:2018-05-30 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Fang Wang, Kai-Liang Zhang E-mail:fwang75@163.com;kailiang_zhang@163.com
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700).

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮)

School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic, Communication Devices, Tianjin University of Technology, Tianjin, China

Received:2018-04-24 Revised:2018-05-30 Online:2018-08-05 Published:2018-08-05
Contact: Fang Wang, Kai-Liang Zhang E-mail:fwang75@163.com;kailiang_zhang@163.com
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700).

摘要/Abstract

摘要：

The impacts of HfO_x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory (TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO_x/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO_x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO_x/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state (LRS) and Schottky emission in the high resistive state (HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.

关键词: transparent resistive random access memory (TRRAM), HfO_x inserting layer, uniformity, forming-free

Abstract:

Key words: transparent resistive random access memory (TRRAM), HfO_x inserting layer, uniformity, forming-free

中图分类号: (ZnO)

77.55.hf

85.35.-p (Nanoelectronic devices) 85.30.-z (Semiconductor devices)

吴仕剑, 王芳, 张志超, 李毅, 韩叶梅, 杨正春, 赵金石, 张楷亮. High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer[J]. 中国物理B, 2018, 27(8): 87701-087701.

Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮). High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer[J]. Chin. Phys. B, 2018, 27(8): 87701-087701.

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High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

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