中国物理B ›› 2016, Vol. 25 ›› Issue (5): 56501-056501.doi: 10.1088/1674-1056/25/5/056501

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明)   

  1. 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
    2. Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing 210000, China
  • 收稿日期:2015-12-23 修回日期:2016-02-22 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Ling Li E-mail:lingli@ime.ac.cn
  • 基金资助:

    Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, the National High Technology Research and Development Program of China (Grant No. 2014AA032901), the National Natural Science Foundation of China (Grant Nos. 61574166, 61334007, 61306117, 61322408, 61221004, and 61274091), Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008), and the CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201504).

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

Nianduan Lu(卢年端)1,2, Pengxiao Sun(孙鹏霄)1,2, Ling Li(李泠)1,2, Qi Liu(刘琦)1,2, Shibing Long(龙世兵)1,2, Hangbing Lv(吕杭炳)1,2, Ming Liu(刘明)1,2   

  1. 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
    2. Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing 210000, China
  • Received:2015-12-23 Revised:2016-02-22 Online:2016-05-05 Published:2016-05-05
  • Contact: Ling Li E-mail:lingli@ime.ac.cn
  • Supported by:

    Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, the National High Technology Research and Development Program of China (Grant No. 2014AA032901), the National Natural Science Foundation of China (Grant Nos. 61574166, 61334007, 61306117, 61322408, 61221004, and 61274091), Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008), and the CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201504).

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摘要：

Three-dimensional (3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the 3D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.

关键词: 3-dimensional resistive random access memory (RRAM), thermal effect, endurance performance

Abstract:

Three-dimensional (3D) crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the 3D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.

Key words: 3-dimensional resistive random access memory (RRAM), thermal effect, endurance performance

中图分类号:  (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)

  • 65.60.+a
66.30.Xj (Thermal diffusivity) 68.35.bg (Semiconductors)