Graphene resistive random memory–the promising memory device in next generation

doi:10.1088/1674-1056/26/3/038501

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/26/3/038501

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇下一篇

Graphene resistive random memory–the promising memory device in next generation

Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令)

1 Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
2 Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University, Beijing 100084, China

收稿日期:2016-08-30 修回日期:2016-10-05 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Yi Yang, Tian-Ling Ren E-mail:yiyang@tsinghua.edu.cn;RenTL@tsinghua.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574083 and 61434001), the National Basic Research Program of China (Grant No. 2015CB352101), the National Key Research and Development Program of China (Grant No. 2016YFA0200404), the National Key Project of Science and Technology of China (Grant No. 2011ZX02403-002), Special Fund for Agroscientic Research in the Public Interest of China (Grant No. 201303107), the Independent Research Program of Tsinghua University, China (Grant No. 2014Z01006), and Advanced Sensor and Integrated System Lab of Tsinghua University Graduate School at Shenzhen, China (Grant No. ZDSYS20140509172959969).

Graphene resistive random memory–the promising memory device in next generation

Xue-Feng Wang(王雪峰)^1,2, Hai-Ming Zhao(赵海明)^1,2, Yi Yang(杨轶)^1,2, Tian-Ling Ren(任天令)^1,2

1 Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
2 Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University, Beijing 100084, China

Received:2016-08-30 Revised:2016-10-05 Online:2017-03-05 Published:2017-03-05
Contact: Yi Yang, Tian-Ling Ren E-mail:yiyang@tsinghua.edu.cn;RenTL@tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574083 and 61434001), the National Basic Research Program of China (Grant No. 2015CB352101), the National Key Research and Development Program of China (Grant No. 2016YFA0200404), the National Key Project of Science and Technology of China (Grant No. 2011ZX02403-002), Special Fund for Agroscientic Research in the Public Interest of China (Grant No. 201303107), the Independent Research Program of Tsinghua University, China (Grant No. 2014Z01006), and Advanced Sensor and Integrated System Lab of Tsinghua University Graduate School at Shenzhen, China (Grant No. ZDSYS20140509172959969).

摘要/Abstract

摘要：

Graphene-based resistive random access memory (GRRAM) has grasped researchers' attention due to its merits compared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories: graphene RRAM and graphene oxide (GO)/reduced graphene oxide (rGO) RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory.

关键词: graphene-based resistive random access memory, graphene oxide (GO)/reduced graphene oxide (rGO), resistive switching, graphene

Abstract:

Key words: graphene-based resistive random access memory, graphene oxide (GO)/reduced graphene oxide (rGO), resistive switching, graphene

中图分类号: (Superconducting logic elements and memory devices; microelectronic circuits)

85.25.Hv

68.65.Pq (Graphene films) 88.30.mj (Composite materials) 72.80.Vp (Electronic transport in graphene)

王雪峰, 赵海明, 杨轶, 任天令. Graphene resistive random memory–the promising memory device in next generation[J]. 中国物理B, 2017, 26(3): 38501-038501.

Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令). Graphene resistive random memory–the promising memory device in next generation[J]. Chin. Phys. B, 2017, 26(3): 38501-038501.

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Graphene resistive random memory–the promising memory device in next generation

Graphene resistive random memory–the promising memory device in next generation

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