Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction

doi:10.1088/1674-1056/ab54b4

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 126801-126801.doi: 10.1088/1674-1056/ab54b4

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction

Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进)

1 School of Computer and Communication Engineering, Changsha University of Science and Technology, Changsha 410114, China;
2 School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom;
3 Peking University Shenzhen Graduate School, Shenzhen 518055, China

收稿日期:2019-08-08 修回日期:2019-10-04 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Wei Wang E-mail:wangwei@csust.edu.cn
基金资助:
Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).

Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction

Jia-Jia Zhao(赵佳佳)¹, Jin-Shuai Zhang(张金帅)², Feng Zhang(张锋)³, Wei Wang(王威)¹, Hai-Rong He(何海蓉)¹, Wang-Yang Cai(蔡汪洋)¹, Jin Wang(王进)¹

1 School of Computer and Communication Engineering, Changsha University of Science and Technology, Changsha 410114, China;
2 School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom;
3 Peking University Shenzhen Graduate School, Shenzhen 518055, China

Received:2019-08-08 Revised:2019-10-04 Online:2019-12-05 Published:2019-12-05
Contact: Wei Wang E-mail:wangwei@csust.edu.cn
Supported by:
Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).

摘要/Abstract

摘要： The novel BaTiO₃/BiFeO₃/TiO₂ multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol-gel method. The results indicate that the Pt/BaTiO₃/BiFeO₃/TiO₂/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P-E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO₃/BiFeO₃ under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.

关键词: ferroelectric multilayer heterojunction, resistive switching characteristic, electro-optical dual modulation, multi-state resistance

Abstract: The novel BaTiO₃/BiFeO₃/TiO₂ multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol-gel method. The results indicate that the Pt/BaTiO₃/BiFeO₃/TiO₂/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P-E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO₃/BiFeO₃ under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.

Key words: ferroelectric multilayer heterojunction, resistive switching characteristic, electro-optical dual modulation, multi-state resistance

中图分类号: (Multilayers)

68.65.Ac

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.50.Gk (Non-volatile ferroelectric memories)

赵佳佳, 张金帅, 张锋, 王威, 何海蓉, 蔡汪洋, 王进. Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction[J]. 中国物理B, 2019, 28(12): 126801-126801.

Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进). Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction[J]. Chin. Phys. B, 2019, 28(12): 126801-126801.

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Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction

Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction

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