AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

doi:10.1088/1674-1056/22/6/068503

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68503-068503.doi: 10.1088/1674-1056/22/6/068503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

王冲^{a b}, 何云龙^{a b}, 郑雪峰^{a b}, 马晓华^{a b}, 张进成^{a b}, 郝跃^{a b}

a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
b The Institute of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2012-09-21 修回日期:2012-12-05 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. K50510250003 and K50510250006).

AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

Wang Chong (王冲)^{a b}, He Yun-Long (何云龙)^{a b}, Zheng Xue-Feng (郑雪峰)^{a b}, Ma Xiao-Hua (马晓华)^{a b}, Zhang Jin-Cheng (张进成)^{a b}, Hao Yue (郝跃)^{a b}

a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
b The Institute of Microelectronics, Xidian University, Xi'an 710071, China

Received:2012-09-21 Revised:2012-12-05 Online:2013-05-01 Published:2013-05-01
Contact: Wang Chong E-mail:wangchong197810@hotmail.com
Supported by:
Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. K50510250003 and K50510250006).

摘要/Abstract

摘要： AlGaN/GaN high electron mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and the Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMT exhibits current-gain cutoff frequency (f_T) of 10 GHz and power gain cutoff frequency (f_max) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the characteristics of C-V are measured, and the gate interface characteristics of the AZO-gated devices are investigated by C-V dual sweep.

关键词: AlGaN/GaN, high electron mobility transistor, Al-doped ZnO

Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and the Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMT exhibits current-gain cutoff frequency (f_T) of 10 GHz and power gain cutoff frequency (f_max) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the characteristics of C-V are measured, and the gate interface characteristics of the AZO-gated devices are investigated by C-V dual sweep.

Key words: AlGaN/GaN, high electron mobility transistor, Al-doped ZnO

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))

王冲, 何云龙, 郑雪峰, 马晓华, 张进成, 郝跃. AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO[J]. 中国物理B, 2013, 22(6): 68503-068503.

Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃). AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO[J]. Chin. Phys. B, 2013, 22(6): 68503-068503.

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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO

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