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Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure[J]. 中国物理B, 2023, 32(1): 17305-017305. |
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Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101. |
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Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平). Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode[J]. 中国物理B, 2022, 31(5): 57702-057702. |
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Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302. |
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Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105. |
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Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305. |
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Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Device topological thermal management of β-Ga2O3 Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67302-067302. |
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Yi-Di Pang(庞奕荻), En-Xiu Wu(武恩秀), Zhi-Hao Xu(徐志昊), Xiao-Dong Hu(胡晓东), Sen Wu(吴森), Lin-Yan Xu(徐临燕), and Jing Liu(刘晶). Effect of electrical contact on performance of WSe2 field effect transistors[J]. 中国物理B, 2021, 30(6): 68501-068501. |
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Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation[J]. 中国物理B, 2021, 30(5): 56110-056110. |
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Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri. Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells[J]. 中国物理B, 2020, 29(9): 98801-098801. |
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祁路伟, 刘晓宇, 孟进, 张德海, 周静涛. Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure[J]. 中国物理B, 2020, 29(5): 57306-057306. |
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王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. 中国物理B, 2020, 29(4): 47305-047305. |
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王志成, 崔璋璋, 徐珲, 翟晓芳, 陆亚林. Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions[J]. 中国物理B, 2019, 28(8): 87303-087303. |
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李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303. |
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袁昊, 宋庆文, 韩超, 汤晓燕, 何晓宁, 张玉明, 张义门. Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure[J]. 中国物理B, 2019, 28(11): 117303-117303. |