中国物理B ›› 2022, Vol. 31 ›› Issue (5): 57702-057702.doi: 10.1088/1674-1056/ac272a

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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Qiliang Wang(王启亮)1,2,†, Tingting Wang(王婷婷)3,†, Taofei Pu(蒲涛飞)4, Shaoheng Cheng(成绍恒)1,2, Xiaobo Li(李小波)4,‡, Liuan Li(李柳暗)1,2,§, and Jinping Ao(敖金平)3,4   

  1. 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
    3 National Key Discipline Laboratory of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China;
    4 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
  • 收稿日期:2021-07-31 修回日期:2021-09-06 发布日期:2022-04-21
  • 通讯作者: Xiaobo Li,E-mail:lixiaobo166@163.com;Liuan Li,E-mail:liliuan@jlu.edu.cn E-mail:lixiaobo166@163.com;liliuan@jlu.edu.cn
  • 基金资助:
    Project supported by the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B0101690001) and the Natural Science Foundation of Sichuan Province,China (Grant No.22YYJC0596).

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

Qiliang Wang(王启亮)1,2,†, Tingting Wang(王婷婷)3,†, Taofei Pu(蒲涛飞)4, Shaoheng Cheng(成绍恒)1,2, Xiaobo Li(李小波)4,‡, Liuan Li(李柳暗)1,2,§, and Jinping Ao(敖金平)3,4   

  1. 1 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
    3 National Key Discipline Laboratory of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China;
    4 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
  • Received:2021-07-31 Revised:2021-09-06 Published:2022-04-21
  • Contact: Xiaobo Li,E-mail:lixiaobo166@163.com;Liuan Li,E-mail:liliuan@jlu.edu.cn E-mail:lixiaobo166@163.com;liliuan@jlu.edu.cn
  • About author:2021-9-16
  • Supported by:
    Project supported by the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B0101690001) and the Natural Science Foundation of Sichuan Province,China (Grant No.22YYJC0596).

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摘要： A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

关键词: Schottky barrier diode, hybrid anode, dielectric, edge termination

Abstract: A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

Key words: Schottky barrier diode, hybrid anode, dielectric, edge termination

中图分类号:  (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

  • 77.84.Bw
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 52.59.Mv (High-voltage diodes) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))