Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

doi:10.1088/1674-1056/ac7e37

中国物理B ›› 2022, Vol. 31 ›› Issue (10): 108105-108105.doi: 10.1088/1674-1056/ac7e37

所属专题： SPECIAL TOPIC — Celebrating the 70th Anniversary of the Physics of Jilin University

• SPECIAL TOPIC—Celebrating the 70th Anniversary of the Physics of Jilin University • 上一篇下一篇

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction

Wang Lin(林旺)^1,2, Ting-Ting Wang(王婷婷)³, Qi-Liang Wang(王启亮)^1,2, Xian-Yi Lv(吕宪义)^1,2, Gen-Zhuang Li(李根壮)^1,2,†, Liu-An Li(李柳暗)^1,2, Jin-Ping Ao(敖金平)³, and Guang-Tian Zou(邹广田)^1,2,‡

1. State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China;
2. Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
3. National Key Discipline Laboratory of Wide Bandgap Semiconductor, Xidian University, Xi'an 710071, China

收稿日期:2022-05-24 修回日期:2022-06-23 出版日期:2022-10-16 发布日期:2022-09-16
通讯作者: Liu-An Li, Guang-Tian Zou E-mail:liliuan@jlu.edu.cn;gtzou@jlu.edu.cn
基金资助:
Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction

1. State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China;
2. Shenzhen Research Institute, Jilin University, Shenzhen 518057, China;
3. National Key Discipline Laboratory of Wide Bandgap Semiconductor, Xidian University, Xi'an 710071, China

Received:2022-05-24 Revised:2022-06-23 Online:2022-10-16 Published:2022-09-16
Contact: Liu-An Li, Guang-Tian Zou E-mail:liliuan@jlu.edu.cn;gtzou@jlu.edu.cn
Supported by:
Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).

摘要/Abstract

摘要： A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

关键词: diamond, Schottky barrier diode, junction terminal extension, simulation

Abstract: A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

Key words: diamond, Schottky barrier diode, junction terminal extension, simulation

中图分类号: (Diamond)

81.05.ug

73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.Kk (Junction diodes) 88.30.gg (Design and simulation)

Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105.

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction

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