Device topological thermal management of β-Ga2O3 Schottky barrier diodes

doi:10.1088/1674-1056/abeee2

中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/abeee2

Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes

Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟)^†, Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵)^‡

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2021-01-07 修回日期:2021-02-28 接受日期:2021-03-16 出版日期:2021-05-18 发布日期:2021-05-27
通讯作者: Guang-Wei Xu, Shi-Bing Long E-mail:xugw@ustc.edu.cn;shibinglong@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61925110, 61821091, 62004184, 62004186, and 51961145110), the National Key R&D Program of China (Grant Nos. 2018YFB0406504 and 2016YFA0201803), the Strategic Priority Research Program of the Chinese Academy of Sciences (CAS) (Grant No. XDB44000000), the Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSW-JSC048), the Fundamental Research Funds for the Central Universities, China (Grant Nos. WK2100000014 and WK2100000010), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B010174002), and the Opening Project of Key Laboratory of Microelectronics Devices & Integration Technology in Institute of Microelectronics of CAS and Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS.

Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes

Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟)^†, Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵)^‡

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

Received:2021-01-07 Revised:2021-02-28 Accepted:2021-03-16 Online:2021-05-18 Published:2021-05-27
Contact: Guang-Wei Xu, Shi-Bing Long E-mail:xugw@ustc.edu.cn;shibinglong@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61925110, 61821091, 62004184, 62004186, and 51961145110), the National Key R&D Program of China (Grant Nos. 2018YFB0406504 and 2016YFA0201803), the Strategic Priority Research Program of the Chinese Academy of Sciences (CAS) (Grant No. XDB44000000), the Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSW-JSC048), the Fundamental Research Funds for the Central Universities, China (Grant Nos. WK2100000014 and WK2100000010), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B010174002), and the Opening Project of Key Laboratory of Microelectronics Devices & Integration Technology in Institute of Microelectronics of CAS and Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS.

摘要/Abstract

摘要： The ultra-wide bandgap semiconductor β gallium oxide (β-Ga₂O₃) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga₂O₃, their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga₂O₃ Schottky barrier diodes (SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga₂O₃, work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga₂O₃ plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga₂O₃ SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga₂O₃ diode.

关键词: β-Ga₂O₃ Schottky barrier diode, thermal management, TCAD simulation, infrared thermal imaging camera

Abstract: The ultra-wide bandgap semiconductor β gallium oxide (β-Ga₂O₃) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga₂O₃, their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga₂O₃ Schottky barrier diodes (SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga₂O₃, work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga₂O₃ plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga₂O₃ SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga₂O₃ diode.

Key words: β-Ga₂O₃ Schottky barrier diode, thermal management, TCAD simulation, infrared thermal imaging camera

中图分类号: (Semiconductor-electrolyte contacts)

73.40.Mr

84.30.Jc (Power electronics; power supply circuits) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes)

Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67302-067302.

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Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes

Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes

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