中国物理B ›› 2020, Vol. 29 ›› Issue (5): 57306-057306.doi: 10.1088/1674-1056/ab81fc

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

Lu-Wei Qi(祁路伟), Xiao-Yu Liu(刘晓宇), Jin Meng(孟进), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛)   

  1. 1 Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;
    2 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2019-12-20 修回日期:2020-03-10 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Jing-Tao Zhou E-mail:zhoujingtao@ime.ac.cn

Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

Lu-Wei Qi(祁路伟)1,2,3, Xiao-Yu Liu(刘晓宇)2, Jin Meng(孟进)1, De-Hai Zhang(张德海)1, Jing-Tao Zhou(周静涛)2   

  1. 1 Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;
    2 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-12-20 Revised:2020-03-10 Online:2020-05-05 Published:2020-05-05
  • Contact: Jing-Tao Zhou E-mail:zhoujingtao@ime.ac.cn

RichHTML

0

PDF (PC)

115

赞

摘要： The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from -7.31 V to -8.75 V. The simulation of the Schottky metal-brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.

关键词: breakdown characteristics, Schottky metal-brim, Schottky barrier varactor, GaAs

Abstract: The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from -7.31 V to -8.75 V. The simulation of the Schottky metal-brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.

Key words: breakdown characteristics, Schottky metal-brim, Schottky barrier varactor, GaAs

中图分类号:  (Semiconductor-electrolyte contacts)

  • 73.40.Mr
73.61.Ey (III-V semiconductors) 85.30.Kk (Junction diodes) 42.65.Ky (Frequency conversion; harmonic generation, including higher-order harmonic generation)