中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/28/8/087303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions

Zhi-Cheng Wang(王志成), Zhang-Zhang Cui(崔璋璋), Hui Xu(徐珲), Xiao-Fang Zhai(翟晓芳), Ya-Lin Lu(陆亚林)   

  1. 1 Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;
    2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;
    3 Synergy Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2019-04-09 修回日期:2019-06-06 出版日期:2019-08-05 发布日期:2019-08-05
  • 通讯作者: Zhang-Zhang Cui, Ya-Lin Lu E-mail:zzcui@ustc.edu.cn;yllu@ustc.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51627901 and 11574287), the National Key Research and Development Program of China (Grant No. 2016YFA0401004), and the Anhui Initiative in Quantum Information Technologies, China (Grant No. AHY100000).

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions

Zhi-Cheng Wang(王志成)1, Zhang-Zhang Cui(崔璋璋)2,3, Hui Xu(徐珲)1, Xiao-Fang Zhai(翟晓芳)1,3, Ya-Lin Lu(陆亚林)1,2,3   

  1. 1 Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;
    2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China;
    3 Synergy Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2019-04-09 Revised:2019-06-06 Online:2019-08-05 Published:2019-08-05
  • Contact: Zhang-Zhang Cui, Ya-Lin Lu E-mail:zzcui@ustc.edu.cn;yllu@ustc.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 51627901 and 11574287), the National Key Research and Development Program of China (Grant No. 2016YFA0401004), and the Anhui Initiative in Quantum Information Technologies, China (Grant No. AHY100000).

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摘要：

Metal/semiconductor memristive heterostructures have potential applications in nonvolatile memory and computing devices. To enhance the performance of the memristive devices, it requires a comprehensive engineering to the metal/semiconductor interfaces. Here in this paper, we discuss the effects of oxygen vacancies and temperature on the memristive behaviors of perovskite-oxide Schottky junctions, each consisting of SrRuO3 thin films epitaxially grown on Nb:SrTiO3 substrates. The oxygen partial pressure and laser fluence are controlled during the film growth to tune the oxygen defects in SrRuO3 films, and the Schottky barrier height can be controlled by both the temperature and oxygen vacancies. The resistive switching measurements demonstrate that the largest resistance switching ratio can be obtained by controlling oxygen vacancy concentration at lower temperature. It suggests that reducing Schottky barrier height can enhance the resistive switching performance of the SrRuO3/Nb:SrTiO3 heterostructures. This work can conduce to the development of high-performance metal-oxide/semiconductor memristive devices.

关键词: memristor, oxygen vacancy, Schottky barrier

Abstract:

Metal/semiconductor memristive heterostructures have potential applications in nonvolatile memory and computing devices. To enhance the performance of the memristive devices, it requires a comprehensive engineering to the metal/semiconductor interfaces. Here in this paper, we discuss the effects of oxygen vacancies and temperature on the memristive behaviors of perovskite-oxide Schottky junctions, each consisting of SrRuO3 thin films epitaxially grown on Nb:SrTiO3 substrates. The oxygen partial pressure and laser fluence are controlled during the film growth to tune the oxygen defects in SrRuO3 films, and the Schottky barrier height can be controlled by both the temperature and oxygen vacancies. The resistive switching measurements demonstrate that the largest resistance switching ratio can be obtained by controlling oxygen vacancy concentration at lower temperature. It suggests that reducing Schottky barrier height can enhance the resistive switching performance of the SrRuO3/Nb:SrTiO3 heterostructures. This work can conduce to the development of high-performance metal-oxide/semiconductor memristive devices.

Key words: memristor, oxygen vacancy, Schottky barrier

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
81.07.-b (Nanoscale materials and structures: fabrication and characterization) 73.22.-f (Electronic structure of nanoscale materials and related systems) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)