Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

doi:10.1088/1674-1056/ab7909

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/ab7909

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科)

1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

收稿日期:2020-01-07 修回日期:2020-02-07 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001).

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wei-Fan Wang(王伟凡)^1,2, Jian-Feng Wang(王建峰)^1,2,3, Yu-Min Zhang(张育民)^2,3, Teng-Kun Li(李腾坤)^1,2, Rui Xiong(熊瑞)², Ke Xu(徐科)^1,2,3

1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

Received:2020-01-07 Revised:2020-02-07 Online:2020-04-05 Published:2020-04-05
Contact: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001).

摘要/Abstract

摘要： The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10⁵ times. In addition, a high I_on/I_off ratio of ～10⁸ was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B⁺ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.

关键词: termination technology, boron ion implantation, vertical GaN Schottky barrier diode

Abstract: The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10⁵ times. In addition, a high I_on/I_off ratio of ～10⁸ was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B⁺ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.

Key words: termination technology, boron ion implantation, vertical GaN Schottky barrier diode

中图分类号: (III-V semiconductors)

73.61.Ey

73.30.+y (Surface double layers, Schottky barriers, and work functions) 51.50.+v (Electrical properties)

王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. 中国物理B, 2020, 29(4): 47305-047305.

Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科). Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. Chin. Phys. B, 2020, 29(4): 47305-047305.

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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

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