中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97105-097105.doi: 10.1088/1674-1056/21/9/097105
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
滕晓云, 吴艳华, 于威, 高卫, 傅广生
Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生)
摘要: The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V < V < 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V >0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively.
中图分类号: (II-VI semiconductors)