Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

doi:10.1088/1674-1056/21/12/128501

Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/21/12/128501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

孔欣, 魏珂, 刘果果, 刘新宇

Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2012-03-22 修回日期:2012-06-01 出版日期:2012-11-01 发布日期:2012-11-01
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 60890191) and the National Key Basic Research Program of China (Grant No. 2010CB327503).

Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇)

Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2012-03-22 Revised:2012-06-01 Online:2012-11-01 Published:2012-11-01
Contact: Liu Xin-Yu E-mail:xyliu@ime.ac.cn
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 60890191) and the National Key Basic Research Program of China (Grant No. 2010CB327503).

摘要/Abstract

摘要： In this study, physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for U-gate device. U-gate AlGaN/GaN HEMTs are of great feasibility through adjusting the etching conditions of inductively coupled plasma system, without introducing any extra process step. The simulation results are confirmed by the experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for millimeter-wave power application.

关键词: AlGaN/GaN HEMT, breakdown characteristics, millimeter-wave, U-type gate foot

Abstract: In this study, physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for U-gate device. U-gate AlGaN/GaN HEMTs are of great feasibility through adjusting the etching conditions of inductively coupled plasma system, without introducing any extra process step. The simulation results are confirmed by the experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for millimeter-wave power application.

Key words: AlGaN/GaN HEMT, breakdown characteristics, millimeter-wave, U-type gate foot

中图分类号: (Semiconductor devices)

85.30.-z

85.30.Tv (Field effect devices) 73.61.Ey (III-V semiconductors)

孔欣, 魏珂, 刘果果, 刘新宇. Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application[J]. Chin. Phys. B, 2012, 21(12): 128501-128501.

Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇). Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application[J]. Chin. Phys. B, 2012, 21(12): 128501-128501.

参考文献 25

[1]	Wu Y F, Moore M, Abrahamsen A, Jacob-Mitos M, Parikh P, Heikman S and Burk A 2007 IEEE International Electron Devices Meeting, December 10-12, 2007, Washington DC, USA, p. 405
[2]	Pei Y, Chu R M, Fichtenbaum N A, Chen Z, Brown D, Shen L, Keller S, Denbaars S P and Mishra U K 2007 Jpn. J. Appl. Phys. Part 2 46 L1087
[3]	Dora Y, Chakraborty A, McCarthy L, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Dev. Lett. 27 713
[4]	Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G and Khan M A 2006 IEEE Electron Dev. Lett. 27 716
[5]	Uemoto Y, Shibata D, Yanagihara M, Ishida H, Matsuo H, Nagai S, Batta N, Ming L, Ueda T, Tanaka T and Ueda D 2007 IEEE International Electron Devices Meeting, December 10-12, 2007, Washington DC, USA, p. 861
[6]	Choi Y C, Pophristic M, Peres B, Spencer M G and Eastman L F 2006 J. Vac. Sci. Technol. B 24 2601
[7]	Wu Y F, Moore M, Saxler A, Wisleder T and Parikh P 2006 64th Device Research Conference, June 26-28, 2006, Goleta, CA, USA, p. 151
[8]	Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Dev. Lett. 27 13
[9]	Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars S P, Speck J S and Mishra U K 2005 IEEE Electron Dev. Lett. 26 781
[10]	Kikkawa T, Makiyama K, Imanishi K, Ohki T, Kanamura M, Okamoto N, Hara N and Joshin K 2007 Compound Semiconductor Integrated Circuit Symposium, October 14-17, 2007, Portland, OR, USA, p. 1
[11]	Chu R M, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S, DenBaars S P and Mishra U K 2008 IEEE Electron Dev. Lett. 29 974
[12]	Pei Y, Chen Z, Brown D, Keller S, Denbaars S P and Mishra U K 2009 IEEE Electron Dev. Lett. 30 328
[13]	Shen L, Heikman S, Moran B, Coffie R, Zhang N Q, Buttari D, Smorchkova I P, Keller S, DenBaars S P and Mishra U K 2001 IEEE Electron Dev. Lett. 22 457
[14]	Guerra D, Akis R, Marino F A, Ferry D K, Goodnick S M and Saraniti M 2010 IEEE Electron Dev. Lett. 31 1217
[15]	Jessen G H, Fitch R C, Gillespie J K, Via G, Crespo A, Langley D, Denninghoff D J, Trejo M and Heller E R 2007 IEEE Trans. Electron Dev. 54 2589
[16]	Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[17]	Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Trans. Electron Dev. 48 535
[18]	Liu J, Zhou Y G, Zhu J, Lau K M and Chen K J 2006 IEEE Electron Dev. Lett. 27 10
[19]	Huq H F and Polash B 2011 Microelectron. J. 42 923
[20]	Bahat-Treidel E, Sidorov V, Wuerfl J and Traenkle G 2007 Simulation of Semiconductor Processes and Devices, September 25-27, 2007, Vienna, Austria, p. 277
[21]	Ohno Y, Nakao T, Kishimoto S, Maezawa K and Mizutani T 2004 Appl. Phys. Lett. 84 2184
[22]	Kaddeche M, Telia A and Soltani A 2009 International Conference on Signals, Circuits and Systems, November 6-8, 2009, Constantine, Algeria, p. 1
[23]	Sun Y and Eastman L F 2005 Electron. Lett. 41 854
[24]	Liu G G, Wei K, Huang J, Liu X Y and Niu J B 2011 J. Infrared Millim. Wave 30 289
[25]	Nakao T, Ohno Y, Kishimoto S, Maezawa K and Mizutani T 2003 Phys. Stat. Sol. (c) 0 2335

Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

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