中国物理B ›› 2011, Vol. 20 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/20/6/067304

• • 上一篇    下一篇

Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress

杨丽媛1, 郝跃1, 马骥刚2, 贺强2, 焦颖2, 马平2, 马晓华3   

  1. (1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xián 710071, China; (2)School of Technical Physics, Xidian University, Xián 710071, China; (3)School of Technical Physics, Xidian University, Xián 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xián 710071, China
  • 收稿日期:2011-02-22 修回日期:2011-03-28 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB309606).

Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress

Ma Xiao-Hua(马晓华)a)b)† , Ma Ji-Gang(马骥刚) a), Yang Li-Yuan(杨丽媛)b), He Qiang(贺强)a), Jiao Ying(焦颖)a), Ma Ping(马平)a), and Hao Yue(郝跃) b)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University, Xi'an 710071, China
  • Received:2011-02-22 Revised:2011-03-28 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB309606).

PDF (PC)

1973

赞

摘要： The kink effect is studied in an AlGaN/GaN high electron mobility transistor by measuring DC performance during fresh, short-term stress and recovery cycle with negligible degradation. Vdg plays an assistant role in detrapping electrons and short-term stress results in no creation of new category traps but an increase in number of active traps. A possible mechanism is proposed that electrical stress supplies traps with the electric field for activation and when device is under test field-assisted hot-electrons result in electrons detrapping from traps, thus deteriorating the kink effect. In addition, experiments show that the impact ionization is at a relatively low level, which is not the dominant mechanism compared with trapping effect. We analyse the complicated link between the kink effect and stress bias through groups of electrical stress states: Vds=0-state, off-state, on-state (on-state with low voltage, high-power state, high field state). Finlly, a conclusion is drawn that electric field brings about more severe kink effect than hot electrons. With the assistance of electric field, hot electrons tend to be possible to modulate the charges in deep-level trap.

关键词: high electron mobility transistors, AlGaN/GaN, kink effect, stress states

Abstract: The kink effect is studied in an AlGaN/GaN high electron mobility transistor by measuring DC performance during fresh, short-term stress and recovery cycle with negligible degradation. Vdg plays an assistant role in detrapping electrons and short-term stress results in no creation of new category traps but an increase in number of active traps. A possible mechanism is proposed that electrical stress supplies traps with the electric field for activation and when device is under test field-assisted hot-electrons result in electrons detrapping from traps, thus deteriorating the kink effect. In addition, experiments show that the impact ionization is at a relatively low level, which is not the dominant mechanism compared with trapping effect. We analyse the complicated link between the kink effect and stress bias through groups of electrical stress states: Vds=0-state, off-state, on-state (on-state with low voltage, high-power state, high field state). Finlly, a conclusion is drawn that electric field brings about more severe kink effect than hot electrons. With the assistance of electric field, hot electrons tend to be possible to modulate the charges in deep-level trap.

Key words: high electron mobility transistors, AlGaN/GaN, kink effect, stress states

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)