中国物理B ›› 2011, Vol. 20 ›› Issue (11): 117302-117302.doi: 10.1088/1674-1056/20/11/117302

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High temperature characteristics of AlGaN/GaN high electron mobility transistors

杨丽媛1, 郝跃1, 张进成1, 张凯1, 马晓华2, 潘才渊3, 马骥刚3, 马平3   

  1. (1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; School of Technical Physics, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-05-25 修回日期:2011-07-11 出版日期:2011-11-15 发布日期:2011-11-15

High temperature characteristics of AlGaN/GaN high electron mobility transistors

Yang Li-Yuan(杨丽媛)a)†, Hao Yue(郝跃) a), Ma Xiao-Hua(马晓华)a)b), Zhang Jin-Cheng(张进成)a), Pan Cai-Yuan(潘才渊)b), Ma Ji-Gang (马骥刚) b), Zhang Kai(张凯)a), and Ma Ping(马平)b)   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2011-05-25 Revised:2011-07-11 Online:2011-11-15 Published:2011-11-15

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摘要： Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.

关键词: AlGaN/GaN high electron mobility transistor, high temperature characteristics, traps, current collapse

Abstract: Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.

Key words: AlGaN/GaN high electron mobility transistor, high temperature characteristics, traps, current collapse

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
85.30.Tv (Field effect devices)