中国物理B ›› 2011, Vol. 20 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/20/11/117301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

陈丰平1, 张玉明1, 张义门1, 汤晓燕1, 王悦湖1, 陈文豪2   

  1. (1)School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-03-30 修回日期:2011-05-03 出版日期:2011-11-15 发布日期:2011-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

Chen Feng-Ping(陈丰平)a)† , Zhang Yu-Ming(张玉明)a), Zhang Yi-Men(张义门)a), Tang Xiao-Yan(汤晓燕)a), Wang Yue-Hu(王悦湖) a), and Chen Wen-Hao(陈文豪)b)   

  1. a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2011-03-30 Revised:2011-05-03 Online:2011-11-15 Published:2011-11-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

摘要: The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm2.

Abstract: The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm2.

Key words: 4H-SiC, junction barrier Schottky, offset field plate, electrical characteristics

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
73.40.-c (Electronic transport in interface structures) 85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.Kk (Junction diodes)