Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

doi:10.1088/1674-1056/20/10/108502

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/20/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

徐小波, 张鹤鸣, 胡辉勇, 李妤晨, 屈江涛

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-08-30 修回日期:2011-05-19 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the Science Foundation of National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Program in Shaanxi Province of China (Grant No. 2010JQ8008).

Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Xu Xiao-Bo(徐小波)^†, Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-08-30 Revised:2011-05-19 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the Science Foundation of National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Program in Shaanxi Province of China (Grant No. 2010JQ8008).

摘要/Abstract

摘要： In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon-on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiGe SOI BiCMOS technology.

Abstract: In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon-on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiGe SOI BiCMOS technology.

Key words: avalanche multiplication, heterojunction bipolar transistor, thin film silicon-on-insulator, SiGe

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

徐小波, 张鹤鸣, 胡辉勇, 李妤晨, 屈江涛. Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator[J]. 中国物理B, 2011, 20(10): 108502-108502.

Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) . Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator[J]. Chin. Phys. B, 2011, 20(10): 108502-108502.

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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

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