Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

doi:10.1088/1674-1056/20/10/108503

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/20/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

梁德春, 安琪, 金鹏, 李新坤, 魏恒, 吴巨, 王占国

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2011-03-24 修回日期:2011-05-09 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037).

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

Liang De-Chun(梁德春), An Qi(安琪), Jin Peng(金鹏)^†, Li Xin-Kun(李新坤), Wei Heng(魏恒), Wu Ju(吴巨), and Wang Zhan-Guo(王占国)

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-03-24 Revised:2011-05-09 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037).

摘要/Abstract

摘要： This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Abstract: This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Key words: InAlGaAs quantum dot, superluminescent diode, optical coherence tomography, short wavelength

中图分类号: (Light-emitting devices)

85.60.Jb

78.67.Hc (Quantum dots) 81.07.Ta (Quantum dots) 81.16.Dn (Self-assembly)

梁德春, 安琪, 金鹏, 李新坤, 魏恒, 吴巨, 王占国. Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes[J]. 中国物理B, 2011, 20(10): 108503-108503.

Liang De-Chun(梁德春), An Qi(安琪), Jin Peng(金鹏), Li Xin-Kun(李新坤), Wei Heng(魏恒), Wu Ju(吴巨), and Wang Zhan-Guo(王占国) . Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes[J]. Chin. Phys. B, 2011, 20(10): 108503-108503.

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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

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