中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/20/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

郑志威, 霍宗亮, 朱晨昕, 许中广, 刘璟, 刘明   

  1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2011-04-25 修回日期:2011-06-07 出版日期:2011-10-15 发布日期:2011-10-15
  • 基金资助:
    Project supported partially by the National Basic Research Program of China (Grant No. 2010CB934204), the National Natural Science Foundation of China (Grant No. 60825403), the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005).

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

Zheng Zhi-Wei(郑志威), Huo Zong-Liang(霍宗亮), Zhu Chen-Xin(朱晨昕), Xu Zhong-Guang(许中广), Liu Jing(刘璟), and Liu Ming(刘明)†   

  1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2011-04-25 Revised:2011-06-07 Online:2011-10-15 Published:2011-10-15
  • Supported by:
    Project supported partially by the National Basic Research Program of China (Grant No. 2010CB934204), the National Natural Science Foundation of China (Grant No. 60825403), the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005).

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摘要： In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Abstract: In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Key words: charge trapping flash, blocking layer, stack

中图分类号:  (Semiconductor devices)

  • 85.30.-z