中国物理B ›› 2022, Vol. 31 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/ac8723

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An insulated-gate bipolar transistor model based on the finite-volume charge method

Manhong Zhang(张满红)† and Wanchen Wu(武万琛)   

  1. School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • 收稿日期:2022-04-19 修回日期:2022-07-04 接受日期:2022-08-05 出版日期:2022-11-11 发布日期:2022-11-19
  • 通讯作者: Manhong Zhang E-mail:zhangmanhong@ncepu.edu.cn

An insulated-gate bipolar transistor model based on the finite-volume charge method

Manhong Zhang(张满红)† and Wanchen Wu(武万琛)   

  1. School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
  • Received:2022-04-19 Revised:2022-07-04 Accepted:2022-08-05 Online:2022-11-11 Published:2022-11-19
  • Contact: Manhong Zhang E-mail:zhangmanhong@ncepu.edu.cn

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摘要： A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor (IGBT) devices using SPICE simulators by extending the lumped-charge method. The new method assumes local quasi-neutrality in the undepleted N- base region and uses the total collector current, the nodal hole density and voltage as the basic quantities. In SPICE implementation, it makes clear and accurate definitions of three kinds of nodes — the carrier density nodes, the voltage nodes and the current generator nodes — in the undepleted N- base region. It uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N- base region. It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes. We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with technology computer-aided design simulations.

关键词: finite-volume charge method, IGBT device, lumped charge method, SPICE simulation, TCAD simulation

Abstract: A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor (IGBT) devices using SPICE simulators by extending the lumped-charge method. The new method assumes local quasi-neutrality in the undepleted N- base region and uses the total collector current, the nodal hole density and voltage as the basic quantities. In SPICE implementation, it makes clear and accurate definitions of three kinds of nodes — the carrier density nodes, the voltage nodes and the current generator nodes — in the undepleted N- base region. It uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N- base region. It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes. We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with technology computer-aided design simulations.

Key words: finite-volume charge method, IGBT device, lumped charge method, SPICE simulation, TCAD simulation

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
85.30.Kk (Junction diodes) 77.55.df (For silicon electronics)