中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/ab7e96
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors
Sheng Sun(孙圣), Yuzhi Li(李育智), Shengdong Zhang(张盛东)
- 1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
2 TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen 518055, China
High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors
Sheng Sun(孙圣)1,2, Yuzhi Li(李育智)1,2, Shengdong Zhang(张盛东)1
- 1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
2 TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen 518055, China
摘要： This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.
中图分类号: (Bipolar transistors)
- 85.30.Pq