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Xin-Xiang Li(李鑫祥), Long-Xiang Liu(刘龙祥), Wei Jiang(蒋伟), Jie Ren(任杰), Hong-Wei Wang(王宏伟), Gong-Tao Fan(范功涛), Jian-Jun He(何建军), Xi-Guang Cao(曹喜光), Long-Long Song(宋龙龙),Yue Zhang(张岳), Xin-Rong Hu(胡新荣), Zi-Rui Hao(郝子锐), Pan Kuang(匡攀), Bing Jiang(姜炳),Xiao-He Wang(王小鹤), Ji-Feng Hu(胡继峰), Jin-Cheng Wang(王金成), De-Xin Wang(王德鑫),Su-Yalatu Zhang(张苏雅拉吐), Ying-Du Liu(刘应都), Xu Ma(麻旭), Chun-Wang Ma(马春旺),Yu-Ting Wang(王玉廷), Zhen-Dong An(安振东), Jun Su(苏俊), Li-Yong Zhang(张立勇),Yu-Xuan Yang(杨宇萱), Wen-Bo Liu(刘文博), Wan-Qing Su(苏琬晴),Sheng Jin(金晟), and Kai-Jie Chen(陈开杰). Measurements of the 107Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility[J]. 中国物理B, 2022, 31(3): 38204-038204. |
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Jie Chen(陈洁), Zhijian Tan(谭志坚), Weiqiang Liu(刘玮强), Sihao Deng(邓司浩), Shengxiang Wang(王声翔), Liyi Wang(王立毅), Haibiao Zheng(郑海彪), Huaile Lu(卢怀乐), Feiran Shen(沈斐然), Jiazheng Hao(郝嘉政), Xiaojuan Zhou(周晓娟), Jianrong Zhou(周健荣), Zhijia Sun(孙志嘉), Lunhua He(何伦华), and Tianjiao Liang(梁天骄). First neutron Bragg-edge imaging experimental results at CSNS[J]. 中国物理B, 2021, 30(9): 96106-096106. |
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刘岩, 陈伟, 贺朝会, 苏春垒, 王晨辉, 金晓明, 李俊霖, 薛院院. Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons[J]. 中国物理B, 2019, 28(6): 67302-067302. |
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潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利. Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation[J]. 中国物理B, 2018, 27(3): 38501-038501. |
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潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利, 魏佳男, 赵雯. Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM[J]. 中国物理B, 2017, 26(1): 18501-018501. |
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孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation[J]. 中国物理B, 2014, 23(11): 116104-116104. |
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刘超铭, 李兴冀, 耿洪滨, 杨德庄, 何世禹 . Effect of bias condition on heavy ion radiation in bipolar junction transistor[J]. 中国物理B, 2012, 21(8): 80703-080703. |
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刘超铭, 李兴冀, 耿洪滨, 芮二明, 郭立新, 杨剑群. Incident particle range dependence of radiation damage in a power bipolar junction transistor[J]. 中国物理B, 2012, 21(10): 104211-104211. |
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李兴冀, 耿洪滨, 兰慕杰, 杨德庄, 何世禹, 刘超铭. Degradation mechanisms of current gain in NPN transistors[J]. 中国物理B, 2010, 19(6): 66103-066103. |
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李兴冀, 耿洪滨, 兰慕杰, 杨德庄, 何世禹, 刘超铭. Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons[J]. 中国物理B, 2010, 19(5): 56103-056103. |
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薛守斌, 黄如, 黄德涛, 王思浩, 谭斐, 王健, 安霞, 张兴. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation[J]. 中国物理B, 2010, 19(11): 117307-117307. |
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高欣, 杨生胜, 薛玉雄, 李凯, 李丹明, 王鹢, 王云飞, 冯展祖. Effects of electron radiation on shielded space and triple-junction GaAs solar cells[J]. 中国物理B, 2009, 18(11): 5015-5019. |