中国物理B ›› 2013, Vol. 22 ›› Issue (3): 36102-036102.doi: 10.1088/1674-1056/22/3/036102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Optical study of D–D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

王云波, 李公平, 许楠楠, 潘小东   

  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2012-06-18 修回日期:2012-09-19 出版日期:2013-02-01 发布日期:2013-02-01
  • 基金资助:
    Project supported by the Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education at Lanzhou University of China (Grant No. LZUMMM2012003), the Chunhui Project of the Ministry of Education of China (Grant No. Z2008-1-62023), and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 860452).

Optical study of D–D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

Wang Yun-Bo (王云波), Li Gong-Ping (李公平), Xu Nan-Nan (许楠楠), Pan Xiao-Dong (潘小东)   

  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2012-06-18 Revised:2012-09-19 Online:2013-02-01 Published:2013-02-01
  • Contact: Li Gong-Ping E-mail:ligp@lzu.edu.cn
  • Supported by:
    Project supported by the Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education at Lanzhou University of China (Grant No. LZUMMM2012003), the Chunhui Project of the Ministry of Education of China (Grant No. Z2008-1-62023), and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 860452).

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摘要： Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1×1014,5×1016, and 1×1017 cm-2) and Cu-doped (5×1016 cm-2) ZnO wafers irradiated by D-D neutrons (fluence of 2.9×1010 cm-2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the würtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from absorption band tail parameter (E0) is far greater for doped ZnO than undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both zinc vacancy and zinc interstitial is much higher for the doped ZnO wafer with high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.

关键词: D-D neutron irradiation, ZnO wafer, Co, Cu

Abstract: Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1×1014,5×1016, and 1×1017 cm-2) and Cu-doped (5×1016 cm-2) ZnO wafers irradiated by D–D neutrons (fluence of 2.9×1010 cm-2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the würtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from absorption band tail parameter (E0) is far greater for doped ZnO than undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both zinc vacancy and zinc interstitial is much higher for the doped ZnO wafer with high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.

Key words: D–D neutron irradiation, ZnO wafer, Co, Cu

中图分类号:  (Neutron radiation effects)

  • 61.80.Hg
61.82.Fk (Semiconductors) 61.72.J- (Point defects and defect clusters) 78.55.Et (II-VI semiconductors)