中国物理B ›› 2019, Vol. 28 ›› Issue (10): 104212-104212.doi: 10.1088/1674-1056/ab4175

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

Xiao-Ming Jin(金晓明), Wei Chen(陈伟), Jun-Lin Li(李俊霖), Chao Qi(齐超), Xiao-Qiang Guo(郭晓强), Rui-Bin Li(李瑞宾), Yan Liu(刘岩)   

  1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China
  • 收稿日期:2019-06-21 修回日期:2019-07-31 出版日期:2019-10-05 发布日期:2019-10-05
  • 通讯作者: Xiao-Ming Jin E-mail:jinxiaoming_2007@tsinghua.org.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043) and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1801Z and 6142802180304).

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

Xiao-Ming Jin(金晓明), Wei Chen(陈伟), Jun-Lin Li(李俊霖), Chao Qi(齐超), Xiao-Qiang Guo(郭晓强), Rui-Bin Li(李瑞宾), Yan Liu(刘岩)   

  1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China
  • Received:2019-06-21 Revised:2019-07-31 Online:2019-10-05 Published:2019-10-05
  • Contact: Xiao-Ming Jin E-mail:jinxiaoming_2007@tsinghua.org.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043) and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1801Z and 6142802180304).

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摘要：

This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.

关键词: neutron SRAM, SEU, cross-section

Abstract:

This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.

Key words: neutron SRAM, SEU, cross-section

中图分类号:  (Environmental and radiation effects on optical elements, devices, and systems)

  • 42.88.+h
61.80.Hg (Neutron radiation effects) 85.30.De (Semiconductor-device characterization, design, and modeling)