中国物理B ›› 2004, Vol. 13 ›› Issue (6): 948-953.doi: 10.1088/1009-1963/13/6/028

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A novel technique for predicting ionizing radiation effects of commercial MOS devices

张国强1, 郭旗2, 艾尔肯2, 陆妩2, 任迪远2   

  1. (1)Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; (2)Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 收稿日期:2003-09-04 修回日期:2004-02-13 出版日期:2005-07-05 发布日期:2005-07-05

A novel technique for predicting ionizing radiation effects of commercial MOS devices

Zhang Guo-Qiang (张国强)a, Guo Qi (郭旗)b, Erkin (艾尔肯)b, Lu Wu (陆妩)b, Ren Di-Yuan (任迪远)b   

  1. a Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; b Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • Received:2003-09-04 Revised:2004-02-13 Online:2005-07-05 Published:2005-07-05

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摘要： A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Abstract: A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Key words: prediction, ionizing radiation effects, commercial MOS devices, regression

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
61.80.Jh (Ion radiation effects) 61.82.Fk (Semiconductors)