中国物理B ›› 1998, Vol. 7 ›› Issue (10): 751-756.doi: 10.1088/1004-423X/7/10/006

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

STUDY OF IRON OVERLAYER ON SULPHUR PASSIVATED GaAs(100) BY SYNCHROTRON RADIATION PHOTOEMISSION

祝传刚, 徐彭寿, 徐法强, 陆尔东, 潘海斌, 郭红志   

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
  • 收稿日期:1998-01-12 出版日期:1998-10-20 发布日期:1998-10-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.19574042).

STUDY OF IRON OVERLAYER ON SULPHUR PASSIVATED GaAs(100) BY SYNCHROTRON RADIATION PHOTOEMISSION

Zhu Chuan-gang (祝传刚), Xu Peng-shou (徐彭寿), Xu Fa-qiang (徐法强), Lu Er-dong (陆尔东), Pan Hai-bin (潘海斌), Guo Hong-zhi (郭红志)   

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
  • Received:1998-01-12 Online:1998-10-20 Published:1998-10-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.19574042).

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摘要： We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weakened by S atoms. This is beneficial to the magnetism in the interface. In the first stage of deposition, Fe clusters is form near S atoms due to the large electronegativity of S. The S atoms remain at the interface with Fe coverage. Magnetic ordering feature is found at a coverage higher than 0.6 nm. According to the large exchange splitting in valence band spectra, we suggest that Fe phase transition from bcc to fcc occurs with increasing coverage.

Abstract: We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weakened by S atoms. This is beneficial to the magnetism in the interface. In the first stage of deposition, Fe clusters is form near S atoms due to the large electronegativity of S. The S atoms remain at the interface with Fe coverage. Magnetic ordering feature is found at a coverage higher than 0.6 nm. According to the large exchange splitting in valence band spectra, we suggest that Fe phase transition from bcc to fcc occurs with increasing coverage.

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
81.65.Rv (Passivation) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 68.35.Ct (Interface structure and roughness) 73.20.At (Surface states, band structure, electron density of states)