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Investigation on the intensity noise characteristics of the semiconductor ring laser |
| Kang Ze-Xin (康泽新)a b, Cai Xin-Lun (蔡鑫伦)b, Wen Xiao-Dong (温晓东)a, Liu Chao (刘超)a, Jian Shui-Sheng (简水生)a, Yu Si-Yuan (余思远)b |
a Key Laboratory of All Optical Network & Advanced Telecommunication Network of EMC, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China;
b The Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1TR, UK |
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Abstract Based on the frequency-domain multimode theoretical model, detailed investigations on the noise characteristic of the semiconductor ring laser (SRL) are first performed in this paper. The comprehensive nonlinear terms related to the third order nonlinear susceptibility χ3 are included in this model; the Langevin noise sources for electric field and carrier density fluctuations are also taken into account. As the injection current increases, the SRL may present several operation regimes. Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs. The influences of the backscattering coefficient on the relative intensity noise (RIN) spectrum in typical operation regimes are investigated in detail.
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Received: 27 February 2013
Revised: 17 June 2013
Accepted manuscript online:
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PACS:
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42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Mi
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(Dynamical laser instabilities; noisy laser behavior)
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42.65.Pc
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(Optical bistability, multistability, and switching, including local field effects)
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| Fund: Project supported by the Major State Basic Research Development Program of China (Grant No. 2010CB328206). |
Corresponding Authors:
Kang Ze-Xin
E-mail: newism@hotmail.com
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| About author: 42.55.Px; 42.60.Mi; 42.65.Pc |
Cite this article:
Kang Ze-Xin (康泽新), Cai Xin-Lun (蔡鑫伦), Wen Xiao-Dong (温晓东), Liu Chao (刘超), Jian Shui-Sheng (简水生), Yu Si-Yuan (余思远) Investigation on the intensity noise characteristics of the semiconductor ring laser 2014 Chin. Phys. B 23 024203
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