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Chin. Phys. B, 2009, Vol. 18(12): 5212-5218    DOI: 10.1088/1674-1056/18/12/018
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Anti-control of chaos in p--Ge photoconductor

Feng Yu-Ling(冯玉玲)andZhang Xi-He(张喜和)
Department of Physics, Changchun University of Science and Technology, Changchun 130022, China
Abstract  We present a scheme for the anti-control of chaos in the p--Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this p--Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p--Ge system gradually evolves to fully developed chaotic states.
Keywords:  anti-control of chaos      p--Ge photoconductor      laser      irradiation  
Received:  17 May 2009      Revised:  15 September 2009      Accepted manuscript online: 
PACS:  72.40.+w (Photoconduction and photovoltaic effects)  
  61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))  
  72.20.Ht (High-field and nonlinear effects)  

Cite this article: 

Feng Yu-Ling(冯玉玲)andZhang Xi-He(张喜和) Anti-control of chaos in p--Ge photoconductor 2009 Chin. Phys. B 18 5212

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