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Chin. Phys. B, 2021, Vol. 30(1): 018105    DOI: 10.1088/1674-1056/abcf92

Edge-and strain-induced band bending in bilayer-monolayer Pb2Se3 heterostructures

Peng Fan(范朋)1, Guojian Qian(钱国健)1, Dongfei Wang(王东飞)1, En Li(李恩)1, Qin Wang(汪琴)1, Hui Chen(陈辉)1,2, Xiao Lin(林晓)1,2, and Hong-Jun Gao(高鸿钧)1,2,
1 Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China; 2 CAS Center for Excellence in Topological Quantum Computation, Beijing 100190, China
Abstract  By using scanning tunneling microscope/microscopy (STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd2Se3 heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd2Se3 terrace. These results provide effective toolsets to tune the band structures in Pd2Se3-based heterostructures and devices.
Keywords:  Pd2Se3      band bending      lateral heterostructures      scanning tunneling microscope/spectroscopy  
Revised:  20 November 2020      Published:  17 December 2020
PACS:  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
  81.05.Zx (New materials: theory, design, and fabrication)  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
  68.37.Ps (Atomic force microscopy (AFM))  
Fund: Project supported by the National Key Research and Development Project of China (Grant Nos. 2016YFA0202300, 2018YFA0305800, and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 61888102 and 52022105), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the University of Chinese Academy of Sciences.
Corresponding Authors:  Corresponding author. E-mail:   

Cite this article: 

Peng Fan(范朋), Guojian Qian(钱国健), Dongfei Wang(王东飞), En Li(李恩), Qin Wang(汪琴), Hui Chen(陈辉), Xiao Lin(林晓), and Hong-Jun Gao(高鸿钧) Edge-and strain-induced band bending in bilayer-monolayer Pb2Se3 heterostructures 2021 Chin. Phys. B 30 018105

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[1] Epitaxial synthesis and electronic properties of monolayer Pd2Se3
Peng Fan(范朋), Rui-Zi Zhang(张瑞梓), Jing Qi(戚竞), En Li(李恩), Guo-Jian Qian(钱国健), Hui Chen(陈辉), Dong-Fei Wang(王东飞), Qi Zheng(郑琦), Qin Wang(汪琴), Xiao Lin(林晓), Yu-Yang Zhang(张余洋), Shixuan Du(杜世萱), Hofer W A, Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2020, 29(9): 098102.
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