Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range

doi:10.1088/1674-1056/abcf38

Abstract The influences of reducing the supply voltage on single event upset (SEU) and multiple-cell upset (MCU) in two kinds of 65-nm static random access memories (SRAMs) are characterized across a wide linear energy transfer (LET) range. The results show that the influence of the voltage variation on SEU cross section clearly depends on the LET value which is above heavy ion LET threshold no matter whether the SRAM is non-hardened 6T SRAM or radiation-hardened double dual interlocked cells (DICE) SRAM. When the LET value is lower than the LET threshold of MCU, the SEU only manifests single cell upset, the SEU cross section increases with the decrease of voltage. The lower the LET value, the higher the SEU sensitivity to the voltage variation is. Lowering the voltage has no evident influence on SEU cross section while the LET value is above the LET threshold of MCU. Moreover, the reduction of the voltage can result in a decrease in the highest-order MCU event cross section due to the decrease of charge collection efficiency of the outer sub-sensitive volume within a certain voltage range. With further scaling the feature size of devices down, it is suggested that the dependence of SEU on voltage variation should be paid special attention to for heavy ions with very low LET or the other particles with very low energy for nanometer commercial off-the-shelf (COTS) SRAM.

Keywords: supply voltage single event upsets multiple-cell upsets 65-nm SRAM double DICE SRAM

Received: 28 July 2020
Revised: 23 October 2020
Accepted manuscript online: 01 December 2020

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.80.Az	(Theory and models of radiation effects)
	21.60.Ka	(Monte Carlo models)

Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690043 and 11690040).

Corresponding Authors: ^†Corresponding author. E-mail: lyhrain@126.com

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Yin-Yong Luo(罗尹虹), Wei Chen(陈伟), Feng-Qi Zhang(张凤祁), and Tan Wang(王坦) Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range 2021 Chin. Phys. B 30 048502

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Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range

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