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Chin. Phys. B, 2019, Vol. 28(10): 107801    DOI: 10.1088/1674-1056/ab3e44
Special Issue: SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang
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Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Yanxu Chen(陈彦旭)1, Dongliang Xu(许栋梁)1, Kaikai Xu(徐开凯)1, Ning Zhang(张宁)1, Siyang Liu(刘斯扬)2, Jianming Zhao(赵建明)1, Qian Luo(罗谦)1, Lukas W. Snyman3, Jacobus W. Swart4
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
3 Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa;
4 Faculty of Electrical and Computer Engineering, State University of Campinas-UNICAMP, Campinas CEP 13083-852, Brazil
Abstract  Si p+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.
Keywords:  silicon light-emitting diode      reverse bias      electro-optic modulation  
Received:  30 June 2019      Revised:  24 August 2019      Published:  05 October 2019
PACS:  78.60.Fi (Electroluminescence)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61704019).
Corresponding Authors:  Kaikai Xu     E-mail:

Cite this article: 

Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC 2019 Chin. Phys. B 28 107801

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