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Chin. Phys. B, 2018, Vol. 27(6): 068505    DOI: 10.1088/1674-1056/27/6/068505

Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter

Yu-Qian Liu(刘彧千)1, Chang-Chun Chai(柴常春)1, Yu-Hang Zhang(张宇航)2, Chun-Lei Shi(史春蕾)1, Yang Liu(刘阳)1, Qing-Yang Fan(樊庆扬)1, Yin-Tang Yang(杨银堂)1
1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China
Abstract  The instantaneous reversible soft logic upset induced by the electromagnetic interference (EMI) severely affects the performances and reliabilities of complementary metal-oxide-semiconductor (CMOS) inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal-oxide-semiconductor field-effect transistor (MOSFET) in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.
Keywords:  electromagnetic interference      soft logic upset      non-equilibrium carrier      upset model  
Received:  26 January 2018      Revised:  03 April 2018      Published:  05 June 2018
PACS:  85.30.Tv (Field effect devices)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No.60776034) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics (Grant No.2015-0214.XY.K).
Corresponding Authors:  Yu-Qian Liu     E-mail:

Cite this article: 

Yu-Qian Liu(刘彧千), Chang-Chun Chai(柴常春), Yu-Hang Zhang(张宇航), Chun-Lei Shi(史春蕾), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Yin-Tang Yang(杨银堂) Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter 2018 Chin. Phys. B 27 068505

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