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Chin. Phys. B, 2018, Vol. 27(6): 068505    DOI: 10.1088/1674-1056/27/6/068505
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter

Yu-Qian Liu(刘彧千)1, Chang-Chun Chai(柴常春)1, Yu-Hang Zhang(张宇航)2, Chun-Lei Shi(史春蕾)1, Yang Liu(刘阳)1, Qing-Yang Fan(樊庆扬)1, Yin-Tang Yang(杨银堂)1
1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China
Abstract  The instantaneous reversible soft logic upset induced by the electromagnetic interference (EMI) severely affects the performances and reliabilities of complementary metal-oxide-semiconductor (CMOS) inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal-oxide-semiconductor field-effect transistor (MOSFET) in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.
Keywords:  electromagnetic interference      soft logic upset      non-equilibrium carrier      upset model  
Received:  26 January 2018      Revised:  03 April 2018      Published:  05 June 2018
PACS:  85.30.Tv (Field effect devices)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No.60776034) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics (Grant No.2015-0214.XY.K).
Corresponding Authors:  Yu-Qian Liu     E-mail:  yuqianliuxd@163.com

Cite this article: 

Yu-Qian Liu(刘彧千), Chang-Chun Chai(柴常春), Yu-Hang Zhang(张宇航), Chun-Lei Shi(史春蕾), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Yin-Tang Yang(杨银堂) Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter 2018 Chin. Phys. B 27 068505

[1] 1. Tan Z L, Zhang R Q and Xie P H 2007 Proceedings of 8th International Conference on Electronic Measurement and Instruments, August 16-18, 2007, Xian, China, pp. 1-498
[2] Bessarab A V, Gorbunov A A, Martynenko S P and Prudkoy N A 2004 IEEE Trans. Plasma. Sci. 32 1400
[3] Nitsch D, Camp M, Sabath F, ter Haseborg J L and Garbe H 2004 IEEE Trans. Electromagn. Campat. 46 380
[4] Hoad R, Carter N J, Herke D and Watkins S P 2004 IEEE Trans. Electromagn. Campat. 46 390
[5] Bäckström M G and Lövvstrand K G 2004 IEEE Trans. Electromagn. Campat. 46 396
[6] MÅnsson D, Thottappillil R, Nilsson T, LundÉn O and BÄckstrÖm M 2008 IEEE Trans. Electromagn. Campat. 50 434
[7] Li X L, Du Z W and Li M K 2017 IEEE Trans. Electromagn. Campat. 59 952
[8] Baumann R C 2005 IEEE Trans. Device Mater. Rel. 5 305
[9] Kim K and Iliadis A A 2010 Solid State Electron. 54 18
[10] Zhang Y H, Chai C C, Liu Y, Yang Y T, Shi C L, Fan Q Y and Liu Y Q 2017 Chin. Phys. B 26 058502
[11] Yu X H, Chai C C, Qiao L P, Yang Y T, Liu Y and Xi X W 2015 J. Semicond. 36 054011
[12] Zhang Y H, Chai C C, Yu X H, Yang Y T, Liu Y, Fan Q Y and Shi C L 2017 Chin. Phys. B 26 028501
[13] Chen J and Du Z W 2013 Microelectron. Reliab. 53 371
[14] Chen J and Du Z W 2013 Microelectron. Reliab. 53 1891
[15] Kim K and Iliadis A A 2007 International Semiconductor Device Research Symposium, December 12-14, 2007, College Park, MD, USA, p. 1
[16] Kim K and Iliadis A A 2008 Solod State Electron. 52 1589
[17] Yen C C, Ker M D and Chen T Y 2009 IEEE Trans. Dev. Mater. Rel. 9 225
[18] Kim K and Iliadis A A 2007 IEEE Trans. Electromagn. Campat. 49 329
[19] Kim K and Iliadis A A 2007 IEEE Trans. Electromagn. Campat. 49 876
[20] Wang H, Li J, Li H, Xiao K and and Chen H 2008 PIER 87 313
[21] Iliadis A A and Kyechong K 2010 IEEE Trans. Dev. Mater. Reliab. 10 347
[22] Kim K, Iliadis A A and Granatstein V L 2004 Solod State Electron. 48 1795
[23] Wang H Y 2010 "Theoretical and Experimental Research on High Power Microwave Effect Mechanism", Ph. D. Dissertation (Chengdu:University of Electronic Science and Technology of China) (in Chinese)
[24] Korte S, Camp M and Garbe H 2005 IEEE International Symposium on Electromagnetic Compatibility, August 8-12, 2005, Chicago, IL, USA, p. 489
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