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Chin. Phys. B, 2017, Vol. 26(5): 058501    DOI: 10.1088/1674-1056/26/5/058501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

He Guan(关赫)1, Hui Guo(郭辉)2
1 Northwestern Polytechnical University, Xi'an 710072, China;
2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China
Abstract  An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτi) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτi) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτi) is helpful in further improving the modeling accuracy degree.
Keywords:  InAs/AlSb HFET      impact ionization      frequency dependency      small-signal equivalent circuit model  
Received:  17 December 2016      Revised:  04 February 2016      Published:  05 May 2017
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Corresponding Authors:  Hui Guo     E-mail:  Guohui@mail.xidian.edu.cn

Cite this article: 

He Guan(关赫), Hui Guo(郭辉) An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect 2017 Chin. Phys. B 26 058501

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