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Chin. Phys. B, 2016, Vol. 25(7): 078101    DOI: 10.1088/1674-1056/25/7/078101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Yong-Xin Zhang(张永欣)1, Fei Liu(刘飞)2, Cheng-Min Shen(申承民)1, Tian-Zhong Yang(杨天中)1, Jun Li(李军)1, Shao-Zhi Deng(邓少芝)2, Ning-Sheng Xu(许宁生)2, Hong-Jun Gao(高鸿钧)1
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China
Abstract  

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.

Keywords:  boron nanowires      graphene-capped boron nanowires      field emission properties  
Received:  07 March 2016      Revised:  16 March 2016      Published:  05 July 2016
PACS:  81.07.Gf (Nanowires)  
  81.05.ue (Graphene)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  85.45.Fd (Field emission displays (FEDs))  
Fund: 

Project supported by the National Basic Research Program of China (Grant No. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Corresponding Authors:  Cheng-Min Shen, Hong-Jun Gao     E-mail:  cmshen@iphy.ac.cn;hjgao@iphy.ac.cn

Cite this article: 

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Tian-Zhong Yang(杨天中), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧) Preparation of few-layer graphene-capped boron nanowires and their field emission properties 2016 Chin. Phys. B 25 078101

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