Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

doi:10.1088/1674-1056/24/5/058502

Abstract Organic ferroelectric field-effect transistors (OFeFETs) are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.

Keywords: organic ferroelectric field-effect transistors polarization fatigue ferroelectric switching

Received: 03 November 2014
Revised: 24 November 2014
Accepted manuscript online:

PACS:	85.50.Gk	(Non-volatile ferroelectric memories)
	77.55.dj	(For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
	77.84.Jd	(Polymers; organic compounds)

Fund: Project supported by the National Key Technologies R&D Program, China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant Nos. 61376108, 61076076, and 61076068), NSAF, China (Grant No. U1430106), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13NM1400600), and Zhuo Xue Plan in Fudan University, China.

Corresponding Authors: Jiang Yu-Long, Ding Shi-Jin, Zhu Guo-Dong
E-mail: yljiang@fudan.edu.cn;sjding@fudan.edu.cn;gdzhu@fudan.edu.cn

About author: 85.50.Gk; 77.55.dj; 77.84.Jd

Cite this article:

Fu Zong-Yuan (浮宗元), Zhang Jian-Chi (张剑驰), Hu Jing-Hang (胡静航), Jiang Yu-Long (蒋玉龙), Ding Shi-Jin (丁士进), Zhu Guo-Dong (朱国栋) Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors 2015 Chin. Phys. B 24 058502

[1]	Hu Z, Tian M, Nysten B and Jonas A 2009 Nat. Mater. 8 62
[2]	Naber R, Asadi K, Blom P, Leeuw D and Boer B 2010 Adv. Mater. 22 933
[3]	Egginger M, Bauer S, Schwodiauer R, Neugebauer H and Sariciftci N 2009 Monatsh Chem. 140 735
[4]	Ma T and Han J 2002 IEEE Electron Device Lett. 23 386
[5]	Ng T, Russo B and Arias A 2009 J. Appl. Phys. 106 094504
[6]	Zhu G, Luo X, Zhang J and Yan X 2009 J. Appl. Phys. 106 074113
[7]	Chen M and Jiang A 2011 Chin. Phys. Lett. 28 077701
[8]	Furukawa T, Nakajima T and Takahashi Y 2006 IEEE Trns. Dielectr. Electr. Insul. 13 1120
[9]	Miller S and McWhorter P 1992 J. Appl. Phys. 72 5999
[10]	Miller S, Schwank J, Nasby R and Rodgers M 1991 J. Appl. Phys. 70 2849
[11]	Müller K, Henkel K, Mandal D, Seime B, Paloumpa I and Schmeisser D 2011 Status Solidi A 208 330
[12]	Brondijk J, Asadi K, Blom P and Leeuw D 2012 J. Polym. Sci. B 50 47
[13]	Vissenberg M and Matters M 1998 Phys. Rev. B 57 12964
[14]	Smits E, Anthopoulos T, Setayesh S, Veenendaal E, Coehoorn R, Blom P, Boer B and Leeuw M 2006 Phys. Rev. B 73 205316
[15]	Zhu G, Zeng Z, Zhang L and Yan X 2006 Appl. Phys. Lett. 89 102905
[16]	Dawber M and Scott J 2000 Appl . Phys. Lett. 76 1060
[17]	Campbell A and Streetman B 1989 Appl. Phys. Lett. 54 445
[18]	Mai M, Martin B and Kliem H 2011 J. Appl. Phys. 110 064101
[19]	Furukawa T, Matsuzaki H, Shiina M and Tajitsu Y 1985 Jpn. J. Appl. Phys. 24 L661
[20]	Pike G and Seager C 1974 Phys. Rev. B 10 1421
[21]	Chang J, Clark I, Zhao N, Sirringhaus H, Breiby D, Andreasen J, Nielsen M, Giles M, Heeney M and McCulloch I 2006 Phys. Rev. B 74 115318

[1]	Polarization fatigue in poly(vinylidene fluoride (78%)-trifluoroethylene (22%)) ferroelectric thin films: a pulse train study Luo Xiao-Ya(罗晓雅), Zhang Ji-Hao(张吉皓), Yan Xue-Jian(严学俭), and Zhu Guo-Dong(朱国栋). Chin. Phys. B, 2010, 19(10): 107702.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

Cite this article:

Online attention