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Modeling for V-O2 reactive sputtering process using a pulsed power supply |
| Wang Tao (王涛)a, Yu He (于贺)a, Dong Xiang (董翔)a, Jiang Ya-Dong (蒋亚东)a, Chen Chao (陈超)a, Wu Ro-Land (胡锐麟)b |
a School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL, 61801, USA |
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Abstract In this article, we present a time-dependent model that enables us to describe the dynamic behavior of pulsed DC reactive sputtering and predict the film compositions of VOx prepared by this process. In this modeling, the average current J is replaced by a new parameter of Jeff. Meanwhile, the four species states of V, V2O3, VO2, and V2O5 in the vanadium oxide films are taken into consideration. Based on this work, the influences of the oxygen gas supply and the pulsed power parameters including the duty cycle and frequency on film compositions are discussed. The model suggests that the time to reach process equilibrium may vary substantially depending on these parameters. It is also indicated that the compositions of VOx films are quite sensitive to both the reactive gas supply and the duty cycle when the power supply works in pulse mode. The‘steady-state’balance values obtained by these simulations show excellent agreement with the experimental data, which indicates that the experimentally obtained dynamic behavior of the film composition can be explained by this time-dependent modeling for pulsed DC reactive sputtering process. Moreover, the computer simulation results indicate that the curves will essentially yield oscillations around the average value of the film compositions with lower pulse frequency.
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Received: 01 January 2014
Revised: 13 March 2014
Accepted manuscript online:
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PACS:
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81.15.Cd
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(Deposition by sputtering)
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81.15.Ef
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| Fund: Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61071032, 61377063, and 61235006). |
Corresponding Authors:
Wang Tao
E-mail: wtwh@uestc.edu.cn
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Cite this article:
Wang Tao (王涛), Yu He (于贺), Dong Xiang (董翔), Jiang Ya-Dong (蒋亚东), Chen Chao (陈超), Wu Ro-Land (胡锐麟) Modeling for V-O2 reactive sputtering process using a pulsed power supply 2014 Chin. Phys. B 23 088113
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