Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector

doi:10.1088/1674-1056/22/4/047202

Abstract Electric luminescence and its circular polarization in a Co₂MnAl injector-based light emitting diode (LED) has been detected at the transition of e-A_C⁰, where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p⁺-GaAs layer. The large volume of the p⁺-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-A_C⁰ emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p⁺-GaAs layer, where the spin polarization of injected electrons is destroyed by very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

Keywords: spin injection Co₂MnAl Heusler alloy electric luminescence

Received: 13 August 2012
Revised: 12 October 2012
Accepted manuscript online:

PACS:	72.25.Mk	(Spin transport through interfaces)
	75.50.Cc	(Other ferromagnetic metals and alloys)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB932901) and the National Natural Science Foundation of China (Grant No. 60836002).

Corresponding Authors: Zheng Hou-Zhi
E-mail: hzzheng@red.semi.ac.cn

Cite this article:

Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华) Spin-polarized injection into p-type GaAs layer from a Co₂MnAl injector 2013 Chin. Phys. B 22 047202

[1]	Palmstrom C 2003 MRS Bull. 725
[2]	Katsnelson M I, Irkhin V Yu, Chioncel L, Lichtenstein A I and de Groot R A 2008 Rev. Mod. Phys. 80 316
[3]	Ramsteiner M, Brandt O, Flissikowski T, Grahn H T, Hashimoto M, Herfort J and Kostial H 2008 Phys. Rev. B 78 121303
[4]	Hickey M C, Holmes S N, Farrer I, Ritchie D A, Pepper M, Damsgaard C D, Jacobsen C S and Hansen J B 2008 Appl. Phys. Lett. 92 232101
[5]	Damsgaard C D, Hickey M C, Holmes S N, Feidenhans'l R, Mariager S O, Jacobsen C S and Hansen J B 2009 J. Appl. Phys. 105 124502
[6]	Dong X Y, Adelmann C, Xie J Q, Palmstrom C J, Lou X, Strand J, Crowell P A, Barnes J P and Petford-Long A K 22005 Appl. Phys. Lett. 86 102107
[7]	See Chapter 2 (pp. 47-49 Dyakonov M I, Perel V I) in Meier F and Zakharchenya B P 1984 Optical Orientation (Amsterdam, Oxford, New York, Tokyo: North-Holland Physics Publishing)
[8]	Wu M W, Jiang J H and Weng M Q 2010 Phys. Rep. 493 61
[9]	See Chapter 3 (pp. 77-105 Pikus G E, Titkov A N) in Meier F and Zakharchenya B P 1984 Optical Orientation (Amsterdam, Oxford, New York, Tokyo: North-Holland Physics Publishing)
[10]	Baldereschi A and Lipari Nunzio O 1973 Phys. Rev. B 8 2697
[11]	Baldereschi A and Lipari Nunzio O 1974 Phys. Rev. B 9 1525

[1]	Spin transport in epitaxial Fe₃O₄/GaAs lateral structured devices Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵). Chin. Phys. B, 2022, 31(6): 068505.
[2]	Thermal stability of the spin injection in Co/Ag/Co lateral spin valves Le Wang(王乐), Lu-Chen Chen(陈鹭琛), Wen-Yu Liu(刘雯雨), Shuo Han(韩烁), Weiwei Wang(王伟伟), Zhanjie Lu(卢占杰), Shan-Shan Chen(陈珊珊). Chin. Phys. B, 2018, 27(9): 097202.
[3]	Progress in organic spintronics Yang Fu-Jiang (杨福江), Han Shi-Xuan (韩士轩), Xie Shi-Jie (解士杰). Chin. Phys. B, 2014, 23(5): 058106.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector

Cite this article:

Online attention

Spin-polarized injection into p-type GaAs layer from a Co₂MnAl injector